Page 1
1 2 3
Features
Power dissipation
2SB1182(PNP)
TO-251/TO-252-2L Transistor
TO-251
1.BASE
2.COLLECTOR
3EMITTER
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector- Base Voltage -40 V
Collector-Emitter Voltage -32 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -2 A
Collector Power Dissipation 1.5 W
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
℃ unless otherwise specified)
=-50µA,IE=0 -40 V
=-1mA,IB=0 -32 V
=-50µA,IC=0 -5 V
TO-252-2L
Dimensions in inches and (millimeters)
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
Rank
Range
FE(1)
VCB=-20V,IE=0 -1 µA
I
CBO
VEB=-4V,IC=0 -1 µA
I
EBO
VCE=-3V,IC=-500mA 82 390
h
FE(1)
IC=-2A,IB=-200mA -0.8 V
V
CE(sat)
VCE=-5V,IC=-0.5A,f=30MHz 100 MHz
f
T
VCB=-10V,IE=0,f=1MHz 50 pF
C
ob
P Q R
82-180 120-270 180-390
Page 2
Typical Characteristics
2SB1182(PNP)
TO-251/TO-252-2L Transistor
Loading...