Page 1
2SB1116/1116A(PNP)
TO-92 Bipolar Transistors
1. EMITTER
2.
COLLECTOR
BASE
3.
Features
TO-92
High Collector Power Dissipation
Complementary to 2SD1616/2SD1616A
MAXIMUM RATINGS (T
Symbol
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage 2SB1116
Collector-Emitter Voltage 2SB1116
2SB1116A
Emitter-Base Voltage
Collector Current -Continuous -1
Collector Power Dissipation 0.75
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
Parameter Value Units
2SB1 116A
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
.
-60
-80
-50
-60
-6
V
V
V
A
W
℃
℃
Dimensions in inches and (millimeters)
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain
Collector-emitter saturation voltage V
Base -emitter saturation voltage V
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CBO
EBO
h
FE(1)
h
FE(2)
CE(sat)
BE(sat)
=-100μA,IE=0
=-1mA,IB=0
=-100μA,IC=0 -6 V
VCB=-60V,IE=0 2SB1116
V
=-80V,IE=0 2SB1116A
CB
VEB=-6V,IC=0 -0.1 μA
VCE=-2V,IC=-0.1A 135 600
VCE=-2V,IC=-1A 81
IC=-1A,IB=-50mA -0.3 V
IC=-1A,IB=-50mA -1.2 V
2SB1 116
2SB1 116A
2SB1 116
2SB1 116A
-60
-80
-50
-60
V
V
-0.1 μA
Base -emitter voltage VBE VCE=-2V,IC=-0.05A -0.6 -0.7 V
Transition frequency fT VCE=-2V,IC=-0.1A 70 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 25 pF
Turn-on time ton 0.07 us
V
=-10V,IC=-0.1A,IB1=-IB2=-0.01A,
Storage time ts 0.7 us
Fall time tf
CLASSIFICATION OF h
Rank
FE(1)
L
V
CC
BE(Off)
=2to3V
K
0.07 us
U
Range
135-270 200-400 300-600
Page 2
2SB1116/1116A(PNP)
Typical Characteristics
TO-92 Bipolar Transistors
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