Page 1
1
2
3
Features
Low collector-emitter saturation voltage V
Large peak collector current IC
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
1. BASE
2. COLLECTOR
3. EMITTER
CE(sat)
2SB1073
SOT-89 Transistor(PNP)
SOT-89
4.6
1.5
4.4
0.48
0.35
1.8
1.4
0.53
0.40
2x)
3.0
0.44
0.37
1.6
1.4
0.8
MIN
B0.13
B
2.6
4.25
2.4
3.75
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage
Collector-Emitter Voltage -20 V
Emitter-Base Voltage -7 V
Collector Current -Continuous -4 A
Collector Power Dissipation 0.5 W
Junction Temperature 150
Storage Temperature -55-150
-30 V
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
=-10μA,IE=0 -30 V
=-1mA,IB=0 -20 V
=-10μA,IC=0 -7 V
VCB=-30V,IE=0 -0.1
VEB=-7V,IC=0 -0.1
μA
μA
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
Rank
Range
Marking
FE
VCE=-2V,IC=-2A 120 315
h
FE
IC=-3A,IB=-100mA -1 V
V
CE(sat)
VCE=-6V,IC=-50mA,f=200MHz 120 MHz
f
T
VCB=-20V,IE=0,f=1MHz 40 pF
C
ob
Q R
120-205 180-315
IQ IR
Page 2
2SB1073
SOT-89 Transistor(PNP)
Typical Characteristics
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