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4.700
5.100
1.730
2.030
0.400
0.600
0.900
1.100
0.400
0.500
5.800
6.200
4.000
8.400
8.800
2.900
3.100
13.800
14.200
1.600
0.000
0.380
1.500 TYP
3
2SA966
TO-92MOD Transistor (PNP)
1. EMITTER
1
2. COLLECTOR
3. BASE
TO-92MOD
Features
Complementary to 2SC2236 and
3 Watts output Applications.
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
Pc
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage -30 V
Collector-Emitter Voltage -30 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -1.5 A
Collector Power Dissipation 0.9 W
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted )
A
Dimensions in inches and (millimeters)
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)
V(BR)
IC= -1mA , IE=0 -30 V
CBO
IC= -10mA ,IB=0 -30 V
CEO
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V(BR)
V
IE= -1mA, IC=0 -5 V
EBO
VCB= -30V, IE=0 -0.1
I
CBO
VEB= -5V, IC=0 -0.1
I
EBO
VCE=-2V, IC= -500mA 100
h
FE
IC= -1.5 A, IB= -0.03A
CE(sat)
I
V
BE
f
T
C
ob
= -500mA,VCE=-2V
C
V
= -2V, IC=-500mA 120 MHz
CE
=-10V, IE=0, f=1MHz
V
CB
CLASSIFICATION OF hFE
Rank O Y
Range
100-200 160-320
μA
μA
320
-2 V
-1 V
30 pF
Page 2
Typical Characteristics
2SA966
TO-92MOD Transistor (PNP)
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