Page 1
1. EMITTER
COLLECTOR
2.
BASE
3.
Features
1W output applications
complementary to 2SC2120
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage -35 V
Collector-Emitter Voltage -30 V
Emitter-Base Voltage -5 V
Collector Current -Continuous
Collector Power Dissipation 0.6 W
Junction Temperature 150
Storage Temperature
=25 unless otherwise noted℃ )
A
-0.8 A
-55 to +150
℃
℃
2SA950(PNP)
TO-92 Bipolar Transistors
TO-92
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Emitter-base voltage
Collector Output Capacitance
Symbol Test conditions MIN TYP MAX UNIT
V
V
V
IC= -0.1mA , IE=0 -35 V
(BR)CBO
IC= -10mA , IB=0 -30 V
(BR)CEO
IE= -0.1mA, IC=0 -5 V
(BR)EBO
VCB= -35V, IE=0 -0.1 μA
I
CBO
VEB= -5V, IC=0 -0.1 μA
I
EBO
h
VCE=-1V, IC=-100mA 100 320
FE(1)
h
VCE=-1V, IC= -700mA 35
FE(2)
IC= -500mA, IB= -20mA -0.7 V
V
CE(sat)
VCE=-1V, IC=-10mA -0.5 -0.8 V
V
BE
ob
f=1MHz
VCB=-10V,IE=0
C
19 pF
Transition frequency
CLASSIFICATION OF h
Rank
Range
FE(1)
V
f
T
=-5V,IC=-10mA 120 MHz
CE
O Y
100-200 160-320
Page 2
Typical Characteristics
2SA950(PNP)
TO-92 Bipolar Transistors
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