Page 1
Features
Wide safe Operating Area.
Complementary to 2SC2703
3
2
1
2SA940(PNP)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
Dimensions in inches and (millimeters)
Symbol Paramenter Value Units
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage -150 V
Collector-Emitter Voltage -150 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -1.5 A
Collector Power Dissipation 1.5 W
Junction Temperature 150
℃
Storage Temperature Range -55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
=-100μA, IE=0 -150 V
=-1mA, IB=0 -150 V
=-100μA, IC=0 -5 V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
VCB=-120V, IE=0 -10 μA
I
CBO
VEB=-5V, IC=0 -10 μA
I
EBO
VCE=-10V, IC=-0.5A 40 140
h
FE
IC=-0.5A, IB=-50mA -1.5 V
V
CE(sat)
VCE=-10V, IC=-0.5A -0.65 -0.85 V
V
BE
VCE=-10V, IC=-0.5A 4 MHz
f
T
VCB=-10V, IE=0, f=1MHz 55 pF
C
ob
Page 2
Typical Characteristics
2SA940(PNP)
TO-220 Transistor
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