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2SA933AS
TO-92S Transistor (PNP)
1. EMITTER
2. COLLECTOR
1 2 3
3. BASE
Features
Excellent h
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter
V
CBO
V
CEO
V
EBO
Collector-Base Voltage -60
Collector-Emitter Voltage -50
Emitter-Base Voltage -6
IC Collector Current
PC Collector Power dissipation
TJ Junction Temperature
T
Storage Temperature
stg
linearity
FE
Value
-150
300
150
-55-150
Units
V
V
V
mA
mW
℃
℃
TO-92S
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
V
V
I
I
h
V
f
Cob
=-50μA,IE=0
(BR)CBO
(BR)CEO
(BR)EBO
V
CBO
V
EBO
V
FE
CEsat
T
I
C
=-1mA,IB=0
I
C
=-50μA,IC=0
I
E
=-60V, IE=0 -0.1 μA
CB
= -6V, IC=0 -0.1 μA
EB
=-6 V, IC= -1mA 120 560
CE
IC= -50mA, IB=-5mA -0.5 V
=-12V, IC=-2mA
V
CE
f=30MHz
VCB=-12V, IC=0, f=1MHz 4 5 pF
-60 V
-50 V
-6 V
140 MHz
CLASSIFICATION OF hFE
Rank
Range
Q R S
120-270 180-390 270-560
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Typical characteristics
2SA933AS
TO-92S Transistor (PNP)
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