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2SA812
SOT-23 Transistor(PNP)
1. BASE
2. EMITTER
3. COLLECTOR
Features
Complementary to 2SC1623
High DC Current Gain: h
High Voltage: V
ceo
MAXIMUM RATINGS (T
=-50V
=25℃ unless otherwise noted)
A
=200 TYP.(VCE=-6V,IC=-1mA)
FE
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector- Base Voltage -60 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -100 mA
Collector Power Dissipation 200 mW
Junction Temperature 150
Storage Temperature -55-150
℃
℃
SOT-23
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol Test conditions MIN TYP MAX UNIT
V
V
V
V
=-100μA, IE=0
(BR)CBO
(BR)CEO
(BR)EBO
I
CBO
I
EBO
h
FE
(sat) IC=-100mA, IB= -10mA -0.3 V
CE
V
BE
f
T
C
ob
I
C
IC= -1mA, IB=0 -50 V
= -100μA, IC=0
I
E
VCB=- 60 V, IE=0 -0.1
VEB= -5V, IC=0 -0.1
VCE=- 6V, IC= -1mA 90 600
IC=-1mA, VCE=-6V -0.58 -0.68 V
V
=-6V, IC= -10mA 180 MHz
CE
VCB=-10V,IE=0,f=1MHz 4.5 pF
CLASSIFICATION OF h
Rank
Range
FE
M4 M5 M6 M7
90-180 135-270 200-400 300-600
-60 V
-5 V
μA
μA
Marking
M4 M5 M6 M7
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Typical characteristics
2SA812
SOT-23 Transistor(PNP)
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