Page 1
2SA719/2SA720(PNP)
TO-92 Bipolar Transistors
1. EMITTER
COLLECTOR
2.
BASE
3.
Features
For low-frequency power amplification
and driver amplification
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
Collector-Base Voltage 2SA719
CBO
V
Collector-Emitter Voltage 2SA719
CEO
V
EBO
IC
PC
TJ
T
stg
Emitter-Base Voltage -5 V
Collector Current -Continuous -500 mA
Collector Power Dissipation 625 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
-30
2SA720
-60
-25
2SA720
-50
V
V
Dimensions in inches and (millimeters)
℃
℃
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
2SA719
2SA720
Collector-emitter breakdown voltage
2SA719
2SA720
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Output Capacitance
V
V
V
IC= -10uA, IE=0
(BR)CBO
IC= -10mA ,IB=0
(BR)CEO
IE= -10uA, IC=0 -5 V
(BR)EBO
VCB= -20V,IE=0 -0.1 uA
I
CBO
VEB= -4V,IC=0 -0.1 uA
I
EBO
h
VCE=-10V, IC= -150mA
FE(1)
VCE=-10V, IC= -500mA 40
h
FE(2)
IC=-300mA, IB= -30mA -0.6 V
V
CE(sat)
IC= -300mA, IB=-30mA -1.5 V
V
BE(sat)
V
= -10V, IC= -50mA
f
T
Cob V
CE
f = 200MHz
=-10V,IE=0,f=1MHZ 15 pF
CB
-30
V
-60
-25
V
-50
85 340
200 MHz
CLASSIFICATION h
Rank
Range
FE(1)
Q R S
85-170 120-240 170-340
Page 2
Typical Characteristics
2SA719/2SA720(PNP)
TO-92 Bipolar Transistors
Page 3
2SA719/2SA720(PNP)
TO-92 Bipolar Transistors
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