Page 1
1. EMITTER
3.700
4.100
1.280
1.580
0.350
0.550
0.600
0.800
0.350
0.450
4.700
5.100
4.000
7.800
8.200
2.440
2.640
13.800
14.200
1.600
0.000
0.300
1.270 TYP
2. COLLECTOR
3. BASE
3
2
1
Features
Automatic insertion by radial taping possible.
Complementary pair with 2SC1384.
2SA684
TO-92L Transistors (PNP)
TO-92L
MAXIMUM RATINGS(T
=25℃ unless otherwise noted)
A
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage -60 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -1 A
Collector Power Dissipation 0.75 W
Junction Temperature 150
Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
VCE=-10V, IE=50mA, f=200MHz 200 MHz
f
T
C
ob
=-10uA, IE=0 -60 V
=-2mA, IB=0 -50 V
=-10μA, IC=0 -5 V
VCB=-20V, IE=0 -0.1 μA
VCE=-10V, IC=-500mA 85 340
VCE=-5V, IC=-1A 50
IC=-500mA, IB=-50mA -0.2 -0.4 V
IC=-500mA, IB=-50mA -0.85 -1.2 V
VCB=-10V, IE=0, f=1MHz 20 30 pF
CLASSIFICATION OF h
Rank Q
Range
FE(1)
R S
85-170 120-240 170-340
℃
℃
Page 2
Typical Characteristics
2SA684
TO-92L Transistor (PNP)
Page 3
2SA684
TO-92L Transistor (PNP)
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