Page 1
Features
1.
EMITTER
COLLECTOR
2.
BASE
3.
2SA562(PNP)
TO-92 Bipolar Transistors
TO-92
Excellent h
linearlity
FE
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage -35 V
Collector-Emitter Voltage -30 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -500 mA
Collector Power Dissipation 500 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V(BR)
V(BR)
V(BR)
V
IC= -100μA , IE=0
CBO
IC= -1mA , IB=0 -30 V
CEO
IE= -100μA, IC=0
EBO
VCB=-35V, IE=0 -0.1
I
CBO
VEB= -5V, IC=0 -0.1
I
EBO
VCE=-1V, IC=-100mA 70 240
h
FE
IC= -100mA, IB= -10mA -0.25 V
CE(sat)
VCE=-1V,IC=-100mA -1 V
V
BE
V
f
T
C
ob
= -6V, IC= -20mA 200 MHz
CE
=-6V,IE=0,f=1MHz
V
CB
-35 V
-5 V
13 pF
CLASSIFICATION OF h
Rank O Y
Range
FE
70-140 120-240
μA
μA
Page 2
Typical Characteristics
2SA562(PNP)
TO-92 Bipolar Transistors
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