Page 1
Features
A collector current is large.
Low V
MARKING: BW
MAXIMUM RATINGS (T
CE(sat)
. V
CE(sat)
BASE
1.
2. EMITTER
COLLECTOR
3.
≤-250mV at IC = -200mA / IB = -10mA
=25℃ unless otherwise noted)
A
2SA2018
SOT-523 Transistor(PNP)
SOT-523
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector- Base Voltage -15 V
Collector-Emitter Voltage -12 V
Emitter-Base Voltage -6 V
Collector Current -Continuous -0.5 A
Collector Power Dissipation 0.15 W
Junction Temperature 150
Storage Temperature -55-150
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
=-10μA, IE=0 -15 V
=-1mA, IB=0 -12 V
=-10μA, IC=0 -6 V
VCB= -15 V, IE=0 -0.1 μA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VEB=- 6V, IC=0 -0.1 μA
I
EBO
VCE=-2V, IC=-10mA 270 680
h
FE
IC=-200mA,IB=-10mA -0.25 V
V
CE(sat)
VCE=-2V,IC=-10mA, f=100MHz 260 MHz
f
T
VCB=-10V,IE=0,f=1MHz 6.5 pF
C
ob
Page 2
Typical Characteristics
2SA2018
SOT-523 Transistor(PNP)
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