Page 1
Features
1. EMITTER
2.
COLLECTOR
BASE
3.
2SA1980(PNP)
TO-92 Bipolar Transistors
TO-92
Low collector saturation voltage: V
Low output capacitance : C
Complementary pair with 2SC5343
=4pF (Typ.)
ob
=-0.3V(Max.)
CE(sat)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous -150 mA
Collector Power Dissipation 625 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
-50 V
-50 V
-5 V
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
CLASSIFICATION OF hFE
Rank
Range
70-140 120-240 200-400 300-700
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
CEO
h
FE
V
CE(sat)
VCE=-10V,IC=-1mA 80 MHz
f
T
C
ob
NF
=-100μA,IE=0 -50 V
=-10mA,IB=0 -50 V
=-10μA,IC=0 -5 V
VCB=-50V,IE=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-6V,IC=-2mA 70 700
IC=-100mA,IB=-10mA -0.3 V
VCB=-10V,IE=0,f=1MHz 4 7 pF
VCE=-6V,IC=-0.1mA,f=1KHZ,RS=10KΩ
10 dB
O Y G L
Page 2
Typical Characteristics
2SA1980(PNP)
TO-92 Bipolar Transistors
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