Page 1
2SA1774
SOT-523 Transistor(PNP)
1. BASE
2. EMTTER
3. COLLECTOR
Features
Reduces Board Space
High h
Low V
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
PC
TJ
T
stg
120–560
：
FE
< 0.5V
CE(sat)
Dimensions in inches and (millimeters)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
SOT-523
-60 V
-50 V
-6 V
-150 mA
150 mW
150
-55-150
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless other wise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(1)
Pulse Test :Pulse Width ≤300us,D.C ≤ 2%
(1)
(1)
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
VCE=-12V, IC=-2.0mA,f=30MHZ 140 MHz
f
T
C
ob
=-50uA, IE=0 -60 V
=-1.0mA, IB=0 -50 V
=-50μA, IC=0 -6.0 V
VCB=-60V, IE=0 -0.1 uA
VEB=-6V, IC=0 -0.1 μA
VCE=-6.0V, IC=-1.0mA 120 560
IC=-50mA, IB=-5.0mA -0.5 V
IC=-50mA, IB=-5.0mA -1.2 V
VCB=-12V, IE=0, f=1MHz 3.5 5 pF
Page 2
Typical Characteristics
2SA1774
SOT-523 Transistor(PNP)
Loading...