Page 1
2SA1740
SOT-89 Transistor(PNP)
Features
High breadown voltage
Excellent h
Marking: AK
1
2
3
linearlity
FE
1. BASE
2. COLLECTOR
3. EMITTER
1.6
1.4
0.44
0.37
Dimensions in inches and (millimeters)
SOT-89
0.8
MIN
B0.13
1.5
4.6
4.4
0.48
0.35
1.8
1.4
0.53
0.40
2x)
3.0
B
2.6
4.25
2.4
3.75
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
Collector-Base Voltage -400 V
CBO
V
Collector-Emitter Voltage -400 V
CEO
V
Emitter-Base Voltage -5 V
EBO
IC Collector Current -Continuous -200 mA
PC Collector Dissipation 500 mW
TJ Junction Temperature 150 ℃
T
Storage Temperature -55-150 ℃
stg
=25℃ unless otherwise noted)
A
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CBO
EBO
DC current gain hFE VCE=-10V,IC=-50mA 60 200
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
CE(sat)
BE(sat)
Transition frequency fT VCE=-30V,IC=-10mA 70 MHz
Collector output capacitance Cob VCB=-30V,IE=0,f=1MHz 5 pF
Turn-ON Time ton 0.25 μs
Turn-OFF Time t
off
=-10μA,IE=0 -400 V
=-1mA,IB=0 -400 V
=-10μA,IC=0 -5 V
VCB=-300V,IE=0 -100 nA
VEB=-4V,IC=0 -100 nA
IC=-50mA,IB=-5mA -0.6 V
IC=-50mA,IB=-5mA -1 V
=-150V ,Ic=-50mA,
V
CC
I
=-IB2=-5mA
B1
5 μs
CLASSIFICATION OF hFE
Rank
Range
D E
60-120 100-200
Page 2
Typical Characteristics
2SA1740
SOT-89 Transistor(PNP)
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