Page 1
2SA1700(PNP)
TO-251/TO-252-2L Transistor
1.BASE
2.COLLECTOR
3.EMITTER
TO-251
1 2 3
Features
High breakdown voltage
Adoption of MBIT process
Excellent h
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
PC
TJ
T
stg
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Collector-Base Voltage -400 V
Collector-Emitter Voltage -400 V
Emitter-Base Voltage -5 V
Collector Current –Continuous -0.2 A
Collector Power Dissipation 1 W
Junction Temperature 150
Storage Temperature -55-150
Parameter Symbol Test conditions MIN TYP MAX UNIT
linearity
FE
=25℃ unless otherwise noted)
A
℃
℃
TO-252-2L
Dimensions in inches and (millimeters)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base- emitter saturation voltage
Transition frequency
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
Turn-off Time
CLASSIFICATION OF h
FE
Rank
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
VCE=-30V,IC=-10mA 70 MHz
f
T
C
ob
C
re
0.25 µS
t
on
t
off
=-10µA,IE=0 -400 V
=-1mA,IB=0 -400 V
=-10µA,IC=0 -5 V
VCB=-300V,IE=0 -0.1
VEB=-4V,IC=0 -0.1
µA
µA
VCE=-10V,IC=-50mA 60 200
IC=-50mA,IB=-5mA -0.8 V
IC=-50mA,IB=-5mA -1 V
VCB=-30V,f=1MHz 5 pF
VCB=-30V,f=1MHz 4 pF
V
=-150V ,IB1=IB2=-5mA,RL=3KΩ
CC
5 µS
D E
Range
60-120 100-200
Page 2
Typical Characteristics
2SA1700(PNP)
TO-251/TO-252-2L Transistor
Page 3
2SA1700(PNP)
TO-251/TO-252-2L Transistor
Loading...