Page 1
Features
2SA1579
SOT-323 Transistor(PNP)
1. BASE
2. EMITTER
3. COLLECTOR
SOT-323
High breakdown voltage. (BV
Complements the 2SC4102
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector- Base Voltage -120 V
Collector-Emitter Voltage -120 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -50 mA
Collector Dissipation 100 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
= -120V)
CEO
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBOIC
=-50μA,IE=0 -120 V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
FE
Rank
Range
Marking
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE
V
CE(sat)
VCE=-12V,IC=-2mA,f=30MHz 140 MHz
f
T
C
ob
=-1mA,IB=0 -120 V
=-50μA,IC=0 -5 V
VCB=-100V,IE=0 -0.5
VEB=-4V,IC=0 -0.5
VCE=-6V,IC=-2mA 180 560
IC=-10mA,IB=-1mA -0.5 V
VCB=-12V,IE=0,f=1MHz 3.2 pF
μA
μA
R S
180-390 270-560
RR RS
Page 2
2SA1579
SOT-323 Transistor(PNP)
Typical Characteristics
Loading...