Page 1
Features
Excellent hFE linearity
Complements the 2SC4081
2SA1576A
SOT-323 Transistor(PNP)
1. BASE
2. EMITTER
3. COLLECTOR
SOT-323
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage -6 V
Collector Current -Continuous -150 mA
Collector Power Dissipation 200 mW
Junction Temperature 150
Storage Temperature -55-150
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
=25℃ unless otherwise noted)
A
-60 V
-50 V
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
=-50μA,IE=0 -60 V
=-1mA,IB=0 -50 V
=-50μA,IC=0 -6 V
VCB=-60V,IE=0 -0.1 μA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF hFE
Rank
Range
Marking
VEB=-6V,IC=0 -0.1 μA
I
EBO
VCE=-6V,IC=-1mA 120 560
h
FE
IC=-50mA,IB=-5mA -0.5 V
V
CE(sat)
VCE=-12V,IC=-2mA,f=30MHz 140 MHz
f
T
VCB=-12V,IE=0,f=1MHz 4 5 pF
C
ob
Q R S
120-270 180-390 270-560
FQ FR FS
Page 2
2SA1576A
SOT-323 Transistor(PNP)
Typical Characteristics
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