Page 1
1. EMITTER
COLLECTOR
2.
BASE
3.
Features
High DC Current gain and excellent hFE linearity
Low saturation voltage
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage -20 V
Collector-Emitter Voltage -10 V
Emitter-Base Voltage -6 V
Collector Current -Continuous
Collector Power Dissipation 0.75 W
Junction Temperature
Storage Temperature
=25 unless otherwise noted℃ )
A
-2 A
150
-55 to +150
℃
℃
2SA1300(PNP)
TO-92 Bipolar Transistors
TO-92
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
Symbol Test conditions MIN TYP MAX UNIT
V
V
V
I
I
h
V
V
f
Cob
IC=-1mA , IE=0 -20
(BR)CBO
IC=-10mA , IB=0 -10
(BR)CEO
IE=-1mA, IC=0 -6
(BR)EBO
VCB=-20 V , IE=0
CBO
VEB=-6 V , IC=0
EBO
FE
IC=-2A, IB= -100mA
CE(sat)
I
BE
T
=-1V, IC=-0.5A 140
V
CE
= -2A, VCE=-1V
C
V
=-1V, IC= -0.5A
CE
f = 30MHz
VCB=-10V,IE=0
f=1MHZ
50 pF
CLASSIFICATION OF h
FE
140
V
V
V
-0.1 µA
-0.1 µA
600
-0.82 V
-1.5 V
MHz
Rank
Range
Y GR BL
140-280 200-400 300-600
Page 2
Typical Characteristics
2SA1300(PNP)
TO-92 Bipolar Transistors
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