Page 1
1. BASE
2. COLLECTOR
3. EMITTER
1 2 3
Features
Strobe Flash Applications Medium Power Amplifier Applications
Excellent h
: h
FE (1)
: h
FE (2)
Low collector saturation voltage
: V
CE (sat)
High power dissipation
: P
= 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
C
linearity
FE
= 100 to 320 (VCE = −2 V, IC = −0.5 A)
= 70 (min) (VCE = −2 V, IC = −4 A)
= −1.0 V (max) (IC = −4 A, IB = −0.1 A)
2SA1242(PNP)
TO-251/TO-252-2L Transistor
TO-251
TO-252-2L
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage -35 V
Collector-Emitter Voltage -20 V
Emitter-Base Voltage -8 V
Collector Current -Continuous
Collector Power Dissipation 1 W
Junction Temperature
Storage Temperature
150 ℃
-55 to +150 ℃
-5 A
s
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
=-100uA, IE=0 -35 V
=-1mA, IB=0 -20 V
=-100uA, IC=0 -8 V
VCB=-35V, IE=0 -100 nA
VEB=-8V, IC=0 -100 nA
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
FE(1)
Rank
Range
h
VCE=-2V, IC=-0.5A 100 320
FE(1)
h
VCE=-2V, IC=-4A 70
FE(2)
IC=-4A, IB=-0.1A -1 V
V
CE(sat)
VCE=-2V, IC=-4A -1.5 V
V
BE
VCE=-2V, IC=-0.5A 170 MHz
f
T
VCB=-10V, IE=0,f=1MHZ 62 pF
C
ob
0 Y
100-200 160-320
Page 2
2SA1242(PNP)
TO-251/TO-252-2L Transistor
TypicalCharacteristics
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