Page 1
2SA1145
4.700
5.100
1.730
2.030
0.400
0.600
0.900
1.100
0.400
0.500
5.800
6.200
4.000
8.400
8.800
2.900
3.100
13.800
14.200
1.600
0.000
0.380
1.500 TYP
TO-92MOD Transistor (PNP)
1. EMITTER
1
2
3
2. COLLECTOR
3. BASE
Features
Complementary to 2SC2705
Small collector output capacitance: Cob=2.5pF(Typ.)
High transition frequency: fT=200MHz(Typ.)
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage -150 V
Collector-Emitter Voltage -150 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -50 mA
Collector Power Dissipation 800 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
TO-92MOD
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBO
V
(BR)CEOIC
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(sat)
V
f
C
IC=-100 μA, IE=0
=-1mA, IB=0 -150 V
IE=-100 μA, IC=0
VCB=-150 V, IE=0 -0.1
VEB=-5 V, IC=0 -0.1
VCE=-5 V, IC=-10mA 80 240
FE
IC=-10mA, IB=-1mA -1 V
VCE=-5 V, IC=-10mA -0.8 V
BE
VCE=-5 V, IC=-10mA 200 MHz
T
VCB=-10 V, IE=0, f=1 MHz 2.5 pF
ob
O Y
80-160 120-240
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF hFE
Rank
Range
Marking
-150 V
-5 V
μA
μA
Page 2
2SA1145
TO-92MOD Transistor (PNP)
Typical Characteristics
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