Page 1
2SA1036
SOT-23 Transistor(PNP)
1. BASE
2. EMITTER
3. COLLECTOR
Features
Large I
Low V
C. ICMax
CE(sat)
MARKING : HP, HQ, HR
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
PC
TJ
T
stg
.= -500 mA
. Ideal for low-voltage operation.
=25℃ unless otherwise noted)
A
Collector-Base Voltage -40 V
Collector-Emitter Voltage -32 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -500 mA
Collector Power Dissipation 200 mW
Junction Temperature 150
Storage Temperature -55-150
℃
℃
SOT-23
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE
V
CE(sat)
VCE=-5V,IC=-20mA,f=100MHz 200 MHz
f
T
C
ob
=-100μA,IE=0 -40 V
=-1mA,IB=0 -32 V
=-100μA,IC=0 -5 V
VCB=-20V,IE=0 -1 μA
VEB=-4V,IC=0 -1 μA
VCE=-3V,IC=-10mA 82 390
IC=-100mA,IB=-10mA -0.4 V
VCB=-10V,IE=0,f=1MHz 7 pF
CLASSIFICATION OF h
FE
Rank
Range
P Q R
82 - 180 120 - 270 180 - 390
Page 2
2SA1036
SOT-23 Transistor(PNP)
Typical Characteristics
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