Page 1
1. EMITTER
4.700
5.100
1.730
2.030
0.400
0.600
0.900
1.100
0.400
0.500
5.800
6.200
4.000
8.400
8.800
2.900
3.100
13.800
14.200
1.600
0.000
0.380
1.500 TYP
1
2
3
2. COLLECTOR
3. BASE
Features
Power amplifier applications
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage -50 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -5 V
Collector Current –Continuous -2 A
Collector Power Dissipation 900 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
2SA1020
TO-92MOD Transistor (PNP)
TO-92MOD
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
C
t
ts 1 μs
IC =-100µA,IE=0
IC =-10mA,IB=0
IE=-100µA,IC=0
=-50V,IE=0
V
CB
=-5V,IC=0
V
EB
=-2V,IC=-0.5A
V
CE
VCE=-2V,IC=-1.5A 40
=-1A,IB=-50mA
I
C
=-1A,IB=-50mA
I
C
T
VCB=-10V,IE=0,f=1MHz 40 pF
ob
0.1 μs
on
=-2V,IC=-500mA
V
CE
=-30V,IB1=-IB2=-0.05A, IC=-1A
V
CC
tf
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
-50 V
-50 V
-5 V
-1 µA
-1 µA
70 240
-0.5 V
-1.2 V
100 MHz
0.1 μs
CLASSIFICATION OF h
Rank
Range
FE1
O Y
70-140 120-240
Page 2
Typical Characteristics
2SA1020
TO-92MOD Transistor (PNP)
Page 3
2SA1020
TO-92MOD Transistor (PNP)
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