Page 1
2SA1020
3.700
4.100
1.280
1.580
0.350
0.550
0.600
0.800
0.350
0.450
4.700
5.100
4.000
7.800
8.200
2.440
2.640
13.800
14.200
1.600
0.000
0.300
1.270 TYP
TO-92L Transistor (PNP)
1. EMITTER
2. COLLECTOR
3. BASE
Features
3
2
1
Power amplifier applications
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage -50 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -5 V
Collector Current –Continuous -2 A
Collector Power Dissipation 900 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
TO-92L
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
CLASSIFICATION OF h
Rank
Range
FE(1)
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
VCE=-2V,IC=-500mA 100 MHz
f
T
C
ob
0.1 μs
t
on
ts 1 μs
tf
=-100µA,IE=0 -50 V
=-10mA,IB=0 -50 V
=-100µA,IC=0 -5 V
VCB=-50V,IE=0 -1 µA
VEB=-5V,IC=0 -1 µA
VCE=-2V,IC=-0.5A 70 240
VCE=-2V,IC=-1.5A 40
IC=-1A,IB=-50mA -0.5 V
IC=-1A,IB=-50mA -1.2 V
VCB=-10V,IE=0,f=1MHz 40 pF
V
=-30V,IB1=-IB2=-0.05A, IC=-1A
CC
0.1 μs
O Y
70-140 120-240
Page 2
Typical Characteristics
2SA1020
TO-92L Transistor (PNP)
Page 3
2SA1020
TO-92L Transistor (PNP)
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