Page 1
Features
3.700
4.100
1.280
1.580
0.350
0.550
0.600
0.800
0.350
0.450
4.700
5.100
4.000
7.800
8.200
2.440
2.640
13.800
14.200
1.600
0.000
0.300
1.270 TYP
2SA1013
TO-92L Transistor (PNP)
TO-92L
EMITTER
1.
COLLECTOR
2.
BASE
3.
3
2
1
High voltage:V
CEO
=-160V
Large continuous collector current capability
Complementary to 2SC2383
MAXIMUM RATINGS (T
=25 unless otherwise noted℃ )
A
Symbol Parameter Value Units
V
CBO
V
Collector-Emitter Voltage
CEO
V
EBO
IC
PC
Tj
T
stg
Collector-Base Voltage
Emitter-Base Voltage -6 V
Collector Current -Continuous -1 A
Collector Power Dissipation 0.9 W
Junction Temperature 150
Storage Temperature -55 to +150
Dimensions in inches and (millimeters)
-160 V
-160 V
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output capacitance
CLASSIFICATION OF hFE
Rank
Range
V
V
V
I
I
h
V
V
f
Cob
IC=- 100μA , IE=0 -160 V
(BR)CBO
IC= -1mA , IB=0 -160 V
(BR)CEO
I
(BR)EBO
V
CBO
V
EBO
V
FE
I
CE(sat)
I
BE
T
= -10μA, IC=0 -6 V
E
=-150 V , IE=0 -1 μA
CB
=-6V, IC=0 -1 μA
EB
=-5 V, IC=- 200mA 60 300
CE
= -500m A, IB= -50mA -1.5 V
C
= -5 mA, VCE=- 5V -0.75 V
C
V
= -5 V, IC= -200mA 15 MHz
CE
VCB=-10V, IE=0,f=1MHz 35 pF
R O Y
60-120 100-200 200-300
Page 2
Typical characteristics
2SA1013
TO-92L Transistor (PNP)
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