Page 1
2SA1012(PNP)
TO-220 Transistor
1. BASE
2. COLLECTOTR
3. EMITTER
3
2
1
Features
HIGH CURRENT SWITCHING APPLICATIONS.
Low Collector Saturation Voltage
: V
High Speed Swithing Time : t
Complementary to 2SC2562
MAXIMUM RATINGS (T
= - 0.4V(MAX) at IC= - 3A
CE(SAT)
A
=25℃ unless otherwise noted)
= 1.0us (Typ.)
stg
Symbol Parameter Value Units
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage -60 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -5 A
Collector Power Dissipation 2 W
Junction Temperature 150
Storage Temperature Range -55-150
℃
℃
TO-220
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
V
V
Collector cut-off current
Emitter cut-off current
DC current gain
h
Collector-emitter saturation voltage V
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on Time
Switching
time
Storage Time
Fall Time
V
IC =-1mA, IE=0 -60 V
(BR)CBO
IC =-1mA, IB=0 -50 V
(BR)CEO
IE=-100μA, IC=0 -5 V
(BR)EBO
VCB=-50V, IE=0 -1 μA
I
CBO
VEB=-5V, IC=0 -1 μA
I
EBO
VCE=-1V, IC=-1A 70 240
h
FE(1)
*
FE(2)
CE(sat)
BE(SAT)
VCE=-4V, IC=-1A 60 MHz
f
T
VCB=-10V, IE=0, f=1MHz 170 pF
C
ob
0.1
t
on
CE
=-3A, IB=150mA -0.2 -0.4 V
I
*
C
IC=-3A, IB=150mA -0.9 -1.2 V
=-1V, IC=-3A 30
V
VCC=-30V,IC=-3A,
1.0
t
stg
t
f
I
=-IB2=-0.15A
B1
0.1
us
*Pulse test: tp≤300μS, δ≤0.02.
CLASSIFICATION OF h
FE
Rank O Y
Range
70-140 120-240
Page 2
Typical Characteristics
2SA1012(PNP)
TO-220 Transistor
Page 3
2SA1012(PNP)
TO-220 Transistor
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