Page 1
Features
2N7002W
Mosfet(N-Channel)
1. GATE
2. SOURCE
3. DRAIN
SOT-323
High density cell design for low R
DS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
Marking: K72
MAXIMUM RATINGS (T
Symbol Parameter Value Units
VDS
ID
PD
TJ
T
stg
Drain-Source voltage 60 V
Drain Current 115 mA
Power Dissipation 225 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
On-state Drain Current
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter Symbol Test conditions MIN TYP MAX UNIT
V
(BR)DSS
V
th(GS)
l
GSS
I
DSS
I
D(ON)
VGS=0 V, ID=10 μA
VGS=0 V, ID=3mA 60
V
V
, ID=250 μA
DS=VGS
=0 V, VGS=±25 V
DS
VDS=60 V, VGS=0 V 1
VGS=10 V, VDS=7 V 500 mA
VGS=10 V, ID=500 mA
r
DS(0n)
g
fs
=5 V, ID=50 mA
V
GS
=10 V, ID=200 mA
V
DS
VGS=10 V, ID=500 mA
V
DS(on)
V
C
C
OSS
C
SD
rSS
VGS=5 V, ID=50 mA
IS=115 mA, VGS=0 V 1.2 V
50
iss
=25V, VGS=0V, f=1MHz
V
25
DS
SWITCHING TIME
Turn-on Time
Turn-off Time
t
d(on)
t
d(off)
=25 V, RL=50Ω
V
DD
I
=500mA,V
D
R
=25 Ω
G
GEN
=10 V
40
60
V
1 2.5
±100
7.5
7.5
80 ms
3.75 V
0.375 V
5
20
nA
μA
Ω
pF
ns
Page 2
2N7002W
Mosfet(N-Channel)
Loading...