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2N5551(NPN)
TO-92 Bipolar Transistors
1.
EMITTER
Features
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.180V)
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage 180 V
Collector-Emitter Voltage 160 V
Emitter-Base Voltage 6 V
Collector Current -Continuous 0.6 A
Collector Power Dissipation 0.625 W
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
2. BASE
3. COLLECTOR
Dimensions in inches and (millimeters)
℃
℃
TO-92
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Input capacitance
Noise figure
*Pulse test
V
(BR)CBOIC
V
(BR)CEO
V
(BR)EBOIE
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CEsat
V
BEsat
VCE=10V,IC=10mA,f=100MHz 100 300 MHz
f
T
C
ob
VBE=0.5V,IC=0,f=1MHz 20 pF
C
ib
NF
=100μA,IE=0 180 V
*IC= 1mA, IB=0 160 V
= 10μA, IC=0 6 V
VCB= 120V, IE=0 50 nA
VEB= 4V, IC=0 50 nA
* VCE=5V, IC=1mA 80
* VCE=5V, IC =10mA 80 250
VCE=5V, IC=50mA 30
IC=10mA, IB=1mA 0.15
*
=50mA, IB=5mA 0.2
I
C
IC=10mA, IB= 1mA 1
*
IC=50mA, IB= 5mA 1
VCB=10V,IE=0,f=1MHz 6 pF
=5V,Ic=0.25mA,
V
CE
f=10Hz to 15.7KHz,Rs=1kΩ
8 dB
V
V
Page 2
Typical Characteristosc
2N5551(NPN)
TO-92 Bipolar Transistors
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