Page 1
Features
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.160V)
1. EMITTER
2. BASE
3.
COLLECTOR
2N5550(NPN)
TO-92 Bipolar Transistors
TO-92
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
Symbol Parameter Value Units
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage 160 V
Collector-Emitter Voltage 140 V
Emitter-Base Voltage 6 V
Collector Current -Continuous 0.6 A
Collector Power Dissipation 0.625 W
Junction Temperature 150
Storage Temperature -55-150
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol Test conditions MIN TYP MAX UNIT
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
I
CBO
I
EBO
IC=100μA,IE=0
IC=1mA, IB=0 140 V
IE=10μA, IC=0
VCB=100V,IE=0 0.1
VEB=4V, IC=0 0.05
160 V
6 V
μA
μA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
h
VCE=5V,IC=1mA 60
FE(1)
h
VCE=5V,IC =10mA 60 250
FE(2)
VCE=5V,IC=50mA 20
h
FE(3)
= 10mA, IB=1mA
I
C
V
V
CEsat
BEsat
f
T
C
ob
NF
I
= 50mA, IB=5mA
C
= 10mA, IB=1mA
I
C
= 50mA, IB=5 mA
I
C
=10V,IC=10mA,,f=100MHz
V
CE
VCB=10V,IE=0,f=1MHz 6 pF
=5V,Ic=0.25mA,
V
CE
f=1KHZ,Rs=1kΩ
100 300 MHz
10 dB
0.15
0.25
1
1.2
V
V
Page 2
Typical Characteristics
2N5550(NPN)
TO-92 Bipolar Transistors
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