Page 1
2N5401(PNP)
TO-92 Bipolar Transistors
1.
2. BASE
3. COLLECTOR
Features
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.160v)
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage -160 V
Collector-Emitter Voltage -150 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -0.6 A
Collector Power Dissipation 0.625 W
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
TO-92
EMITTER
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(
V
V(BR)
I
I
h
h
h
V
V
I
BR)CBO
IC= -1mA, IB=0 -150 V
(BR)CEO
EBO
V
CBO
V
EBO
V
FE(1)
V
FE(2)
V
FE(3)
(sat) IC= -50mA, IB= -5 mA -0.5 V
CE
(sat) IC= -50mA, IB= -5 mA -1 V
BE
fT
= -100μA, IE=0
C
I
= -10μA, IC=0
E
= -120 V, IE=0 -50
CB
= -3V, IC=0 -50 nA
EB
= -5V, IC=-1 mA 80
CE
= -5V, IC= -10 mA 60 240
CE
= -5V, IC=-50 mA 50
CE
VCE=-5V, IC=-10mA
f =30MHz
-160 V
-5 V
100 300 MHz
nA
Page 2
2N5401(PNP)
TO-92 Bipolar Transistors
Typical Characteristics
Loading...