Page 1
2N5400(PNP)
TO-92 Bipolar Transistors
1.
EMITTER
2. BASE
3. COLLECTOR
Features
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.130v)
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
Collector-Base Voltage -130 V
Collector-Emitter Voltage -120 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -0.6 A
Collector Power Dissipation 0.625 W
Junction Temperature 150
Storage Temperature -55-150
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
=25℃ unless otherwise noted)
A
℃
℃
TO-92
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
V
V
IC=-100μA, IE=0 -130 V
(BR)CBO
IC=-1mA, IB=0 -120 V
(BR)CEO
IE= -10μA, IC=0 -5 V
(BR)EBO
VCB= -100 V, IE=0 -0.1
I
CBO
VEB= -3 V, IC=0 -0.1
I
EBO
h
VCE= -5 V, IC=-1mA 30
FE1
h
VCE= -5 V, IC= -10mA 40 180
FE2
h
VCE= -5 V, IC=-50mA 40
FE3
V
IC= -10mA, IB= -1mA -0.2 V
CE(sat)
V
IC= -50mA, IB= -5mA -0.5 V
CE(sat)
V
IC= -10mA, IB= -1mA -1 V
BE(sat)
V
IC= -50mA, IB= -5mA -1 V
BE(sat)
=-10V, IC=-10mA
V
f
T
VCB=-10V,IE=0,f=1MHz 6 pF
C
ob
CE
f =30MHz
100 MHz
μA
μA
Page 2
2N5400(PNP)
TO-92 Bipolar Transistors
Typical Characteristics
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