Page 1
1.
EMITTER
2. BASE
3. COLLECTOR
Features
Power dissipation
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
PC
TJ
T
stg
R
ӨJA
Collector-Base Voltage -40 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -600 mA
Collector Power dissipation 0.625 W
Junction Temperature 150
Storage Temperature -55 to +150
Thermal Resistance, junction to Ambient 357
=25℃ unless otherwise noted)
A
℃/mW
℃
℃
2N4403(PNP)
TO-92 Bipolar Transistors
TO-92
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
Delay time
Rise time
Storage time
Fall time
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
V
CE(sat)1IC
V
CE(sat)2IC
V
BE(sat)1IC
V
BE(sat)2IC
VCE=-10V,IC=-20mA,f=100MHz 200 MHz
f
T
C
ob
15 nS
t
d
20 nS
t
r
225 nS
t
S
t
f
=-100μA,IE=0 -40 V
=-1mA,IB=0 -40 V
=-100μA,IC=0 -5 V
VCB=-35V,IE=0 -100 nA
VEB=-5V,IC=0 -100 nA
VCE=-1V,IC=-0.1mA 30
VCE=-1V,IC=-1mA 60
VCE=-1V,IC=-10mA 100
VCE=-1V,IC=-150mA 100 300
VCE=-2V,IC=-500mA 20
=-150mA,IB=-15mA -0.4 V
=-500mA,IB=-50mA -0.75 V
=-150mA,IB=-15mA -0.75 -0.95 V
=-500mA,IB=-50mA -1.3 V
VCB=-10V,IE=0,f=100KHz 8.5 pF
V
=-30V, IC=-150mA
CC
=- IB2=-15mA
I
B1
30 nS
Page 2
Typical Characteristics
2N4403(NPN)
TO-92 Bipolar Transistors
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