Page 1
2N4401(NPN)
TO-92 Bipolar Transistors
1. EMITTER
2. BASE
3.
COLLECTOR
Features
Power dissipation
MAXIMUM RATINGS (T
Symbol
V
CBO
V
CEO
V
EBO
IC
PC
TJ
T
stg
R
ӨJA
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, junction to Ambient
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
=25℃ unless otherwise noted)
A
Value Units
60 V
40 V
6 V
600 mA
0.625 W
150
-55to +150
357
℃
℃
℃/mW
Dimensions in inches and (millimeters)
TO-92
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
Symbol Test conditions MIN MAX UNIT
V
V
V
V
V
V
V
IC=100μA , IE=0 60 V
(BR)CBO
IC= 1mA , IB=0 40 V
(BR)CEO
IE=100μA, IC=0 6 V
(BR)EBO
VCB=35V, IE=0 0.1 μA
I
CBO
VEB=5V, IC=0 0.1 μA
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
IC=150 mA, IB=15mA 0.4 V
CE(sat)1
IC=500 mA, IB=50mA 0.75 V
CE(sat)2
IC=150 mA, IB=15mA 0.95 V
BE(sat)1
IC=500 mA, IB=50mA 1.2 V
BE(sat)2
f
T
C
ob
15 nS
t
d
t
r
225 nS
t
S
t
f
=1V, IC= 0.1mA 20
V
CE
=1V, IC=1mA 40
V
CE
=1V, IC= 10mA 80
V
CE
=1V, IC=150mA 100 300
V
CE
=2V, IC= 500mA 40
V
CE
V
= 10V, IC= 20mA,
CE
f=100MHz
V
CB
f=100KHz
VCC=30V, V
I
=150mA, IB1=15mA
C
V
CC
I
=-IB2= 15mA
B1
=10V, IE= 0,
BE(OFF)
=30V, IC=150mA
=2V
250 MHz
6.5 pF
20 nS
30 nS
Page 2
2N4401(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
Loading...