Page 1
2N3906(PNP)
TO-92 Bipolar Transistors
1. EMITTER
2. BASE
3.
COLLECTOR
Features
PNP silicon epitaxial planar transistor for switching and
Amplifier applications
As complementary type, the NPN transistor 2N3904 is
Recommended
This transistor is also available in the SOT-23 case with
the type designation MMBT3906
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage -40 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -0.2 A
Collector Power Dissipation 0.625 W
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
TO-92
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
V
V
V
IC = -10μA, IE=0 -40 V
(BR)CBO
IC =-1mA , IB=0 -40 V
(BR)CEO
IE= -10μA, IC=0 -5 V
(BR)EBO
VCB= -40 V,IE=0 -0.1 μA
I
CBO
VCE= -30 V,V
I
CEX
VEB= -5 V , IC=0 -0.1 μA
I
EBO
h
VCE=-1 V, IC= -10mA 100 400
FE1
h
VCE=-1 V, IC= -50mA 60
FE2
VCE=-1 V, IC= -100mA 30
h
FE3
IC= -50mA, IB= -5mA -0.4 V
V
CE(sat)
IC= -50mA, IB= -5mA -0.95 V
V
BE(sat)
V
=-20V, IC= -10mA
f
T
td 35 ns
tr
ts 225 ns
tf
CE
f = 100MHz
V
=-3V,VBE=-0.5V,
CC
I
=-10mA,IB1=-1mA
C
V
=-3V,Ic=-10mA
CC
I
=-1mA
B1=IB2
=-3V -50 nA
BE(off)
250 MHz
35 ns
75 ns
CLASSIFICATION OF h
Rank
FE1
O Y G
Range
100-200 200-300 300-400
Page 2
Typical Characteristics
2N3906(PNP)
TO-92 Bipolar Transistors
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