Lattice Semiconductor Corporation ISPLSI3256E-70LQ, ISPLSI3256E-70LB320, ISPLSI3256E-100LQ, ISPLSI3256E-100LB320 Datasheet

®
ispLSI
3256E
In-System Programmable High Density PLD
Features
• HIGH-DENSITY PROGRAMMABLE LOGIC — 256 I/O Pins — 12000 PLD Gates — 512 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, State
Machines, Address Decoders, etc.
— Small Logic Block Size for Random Logic
2
• HIGH PERFORMANCE E —
fmax = 100 MHz Maximum Operating Frequency tpd = 10 ns Propagation Delay
— — TTL Compatible Inputs and Outputs — Electrically Erasable and Reprogrammable — Non-Volatile — 100% Tested at Time of Manufacture — Unused Product Term Shutdown Saves Power
• IN-SYSTEM PROGRAMMABLE — 5V In-System Programmable (ISP™) using Lattice ISP or Boundary Scan Test (IEEE 1149.1) Protocol — Increased Manufacturing Yields, Reduced Time-to-
Market, and Improved Product Quality
— Reprogram Soldered Devices for Faster Debugging
• 100% IEEE 1149.1 BOUNDARY SCAN COMPATIBLE
• OFFERS THE EASE OF USE AND FAST SYSTEM SPEED OF PLDs WITH THE DENSITY AND FLEXIBILITY OF FIELD PROGRAMMABLE GATE ARRAYS — Complete Programmable Device Can Combine Glue
Logic and Structured Designs — Five Dedicated Clock Input Pins — Synchronous and Asynchronous Clocks — Programmable Output Slew Rate Control to Mini-
mize Switching Noise — Flexible Pin Placement — Optimized Global Routing Pool Provides Global
Interconnectivity
• ispDesignEXPERT™ – LOGIC COMPILER AND COM­PLETE ISP DEVICE DESIGN SYSTEMS FROM HDL SYNTHESIS THROUGH IN-SYSTEM PROGRAMMING
— Superior Quality of Results — Tightly Integrated with Leading CAE Vendor Tools — Productivity Enhancing Timing Analyzer, Explore
Tools, Timing Simulator and ispANALYZER™
— PC and UNIX Platforms
CMOS® TECHNOLOGY
Functional Block Diagram
ORP
H3 H2 H1 H0
A0
A1
A2
ORP
A3
B0
ORP ORP
B1
B2
ORP
B3
C0 C1 C2 C3
ORP
ORP
OR
Array
AND Array
OR
Array
Global Routing Pool
ORP
ORP
G3
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
D0
ORP
ORP
G2 G1 G0
Twin GLB
D1 D2
ORP
D3
Boundary
Scan
F3
F2
F1
F0
E3
ORP ORP
E2
E1
ORP ORP
E0
0139A/3256E
Description
The ispLSI 3256E is a High Density Programmable Logic Device containing 512 Registers, 256 Universal I/O pins, five Dedicated Clock Input Pins, 16 Output Routing Pools (ORP) and a Global Routing Pool (GRP) which allows complete inter-connectivity between all of these ele­ments. The ispLSI 3256E features 5V in-system programmability and in-system diagnostic capabilities. The ispLSI 3256E offers non-volatile reprogrammability of the logic, as well as the interconnect to provide truly reconfigurable systems.
The basic unit of logic on the ispLSI 3256E device is the Twin Generic Logic Block (Twin GLB) labelled A0, A1...H3. There are a total of 32 Twin GLBs in the ispLSI 3256E device. Each Twin GLB has 24 inputs, a programmable AND array and two OR/Exclusive-OR Arrays and eight outputs which can be configured to be either combinato­rial or registered. All Twin GLB inputs come from the GRP.
Copyright © 2002 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A. June 2002 Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com
3256e_08 1
Functional Block Diagram
Figure 1. ispLSI 3256E Functional Block Diagram
I/O 255
I/O 253
I/O 251
I/O 249
I/O 247
I/O 245
I/O 243
GOE0
GOE1
I/O 254
I/O 252
I/O 250
I/O 248
I/O 246
I/O 244
I/O 241
I/O 242
I/O 240
I/O 239
I/O 237
I/O 238
I/O 236
I/O 235
I/O 233
I/O 234
I/O 232
I/O 231
I/O 229
I/O 230
I/O 228
I/O 227
I/O 226
I/O 225
I/O 224
Specifications ispLSI 3256E
I/O 223
I/O 221
I/O 219
I/O 217
I/O 215
I/O 213
I/O 211
I/O 222
I/O 220
I/O 218
I/O 216
I/O 214
I/O 212
I/O 209
I/O 210
I/O 208
I/O 207
I/O 205
I/O 206
I/O 204
I/O 203
I/O 201
I/O 202
I/O 200
I/O 199
I/O 197
I/O 198
I/O 196
I/O 195
I/O 193
I/O 194
I/O 192
BSCAN/ispEN
TCLK/SCLK
TMS/MODE
I/O 1 I/O 3 I/O 5 I/O 7
I/O 9 I/O 11 I/O 13 I/O 15
I/O 17 I/O 19 I/O 21 I/O 23
I/O 25 I/O 27 I/O 29 I/O 31
I/O 33 I/O 35 I/O 37 I/O 39
I/O 41 I/O 43 I/O 45 I/O 47
I/O 49 I/O 51 I/O 53 I/O 55
I/O 57 I/O 59 I/O 61 I/O 63
TOE
I/O 0 I/O 2 I/O 4 I/O 6
I/O 8 I/O 10 I/O 12 I/O 14
I/O 16 I/O 18 I/O 20 I/O 22
I/O 24 I/O 26 I/O 28 I/O 30
I/O 32 I/O 34 I/O 36 I/O 38
I/O 40 I/O 42 I/O 44 I/O 46
I/O 48 I/O 50 I/O 52 I/O 54
I/O 56 I/O 58 I/O 60 I/O 62
Generic
Logic
Blocks
A0
A1
A2
Input Bus
A3
B0
ORP ORP
B1
Input Bus
B2
ORP ORP
B3
ORP
H2 H1 H0
H3
Input Bus Input Bus
ORP ORP
ORP
G2 G1 G0
G3
Global Routing Pool
(GRP)
ISP and
Boundary
Scan TAP
F3
F2
F1
F0
E3
E2
E1
E0
ORP ORP
ORP ORP
TDI/SDI TRST TDO/SDO
Input Bus
Input Bus
I/O 190 I/O 188 I/O 186 I/O 184
I/O 182 I/O 180 I/O 178 I/O 176
I/O 174 I/O 172 I/O 170 I/O 168
I/O 166 I/O 164 I/O 162 I/O 160
I/O 158 I/O 156 I/O 154 I/O 152
I/O 150 I/O 148 I/O 146 I/O 144
I/O 142 I/O 140 I/O 138 I/O 136
I/O 134 I/O 132 I/O 130 I/O 128
I/O 191 I/O 189 I/O 187 I/O 185
I/O 183 I/O 181 I/O 179 I/O 177
I/O 175 I/O 173 I/O 171 I/O 169
I/O 167 I/O 165 I/O 163 I/O 161
I/O 159 I/O 157 I/O 155 I/O 153
I/O 151 I/O 149 I/O 147 I/O 145
I/O 143 I/O 141 I/O 139 I/O 137
I/O 135 I/O 133 I/O 131 I/O 129
RESET
Megablock
C1 C2 C3
C0
ORP ORP
ORP ORP
Input Bus Input Bus
I/O 88
I/O 90
I/O 92
I/O 64
I/O 66
I/O 65
I/O 67
I/O 68
I/O 70
I/O 69
I/O 71
I/O 72
I/O 74
I/O 73
I/O 75
I/O 76
I/O 78
I/O 77
I/O 79
I/O 80
I/O 82
I/O 81
I/O 83
I/O 84
I/O 85
I/O 86
I/O 87
I/O 89
I/O 91
I/O 94
I/O 93
I/O 95
2
D0
I/O 96
I/O 98
I/O 97
I/O 99
D1 D2 D3
I/O 100
I/O 102
I/O 104
I/O 106
I/O 108
I/O 110
I/O 101
I/O 103
I/O 105
I/O 107
I/O 109
I/O 111
I/O 112
I/O 114
I/O 113
I/O 115
I/O 116
I/O 118
I/O 117
I/O 119
I/O 120
I/O 122
I/O 121
I/O 123
I/O 124
I/O 126
I/O 125
I/O 127
CLK 1
CLK 0
Y0
Y1Y2Y3
IOCLK 1
CLK 2
IOCLK 0
Y4
0139isp/3256E
Description (continued)
Specifications ispLSI 3256E
All local logic block outputs are brought back into the GRP so they can be connected to the inputs of any other logic block on the device. The device also has 256 I/O cells, each of which is directly connected to an I/O pin. Each I/O cell can be individually programmed to be a combinatorial input, a registered input, a latched input, an output or a bidirectional I/O pin with 3-state control. The signal levels are TTL compatible voltages and the output drivers can source 4 mA or sink 8 mA. Each output can be programmed independently for fast or slow output slew rate to minimize overall output switching noise.
The 256 I/O Cells are grouped into 16 sets of 16 bits. Pairs of these I/O groups are associated with a logic Megablock through the use of the ORP. Each Megablock is able to provide one Product Term Output Enable (PTOE) signal which is globally distributed to all I/O cells. That PTOE signal can be generated within any GLB in the Megablock. Each I/O cell can select either a Global OE or a PTOE.
Four Twin GLBs, 32 I/O Cells and two ORPs are con­nected together to make a logic Megablock. The Megablock is defined by the resources that it shares. The outputs of the four Twin GLBs are connected to a set of 32 I/O cells by the ORP. The ispLSI 3256E device contains eight of these Megablocks.
Clocks in the ispLSI 3256E device are provided through five dedicated clock pins. The five pins provide three clocks to the Twin GLBs and two clocks to the I/O cells.
The table below lists key attributes of the device along with the number of resources available.
An additional feature of the ispLSI 3256E is its Boundary Scan capability, which is composed of cells connected between the on-chip system logic and the device’s input and output pins. All I/O pins have associated boundary scan registers, with 3-state I/O using three boundary scan registers and inputs using one.
The ispLSI 3256E supports all IEEE 1149.1 mandatory instructions, which include BYPASS, EXTEST and SAMPLE.
Key Attributes of the ispLSI 3256E
etubirttAytitnauQ
sBLGniwT 23
sretsigeR 215
sniPO/I 652
skcolClabolG 5
The GRP has as its inputs the outputs from all of the Twin GLBs and all of the inputs from the bidirectional I/O cells. All of these signals are made available to the inputs of the Twin GLBs. Delays through the GRP have been equal­ized to minimize timing skew and logic glitching.
EOlabolG 2
EOtseT 1
E6523/300-elbaT
3
Specifications ispLSI 3256E
Absolute Maximum Ratings
1
Supply Voltage Vcc...........................................................................-0.5 to +7.0V
Input Voltage Applied........................................................................-2.5 to VCC +1.0V
Off-State Output Voltage Applied .....................................................-2.5 to VCC +1.0V
Storage Temperature........................................................................-65 to 150°C
Case Temp. with Power Applied ......................................................-55 to 125°C
Max. Junction Temp. (TJ) with Power Applied (304-Pin PQFP) ......150°C
Max. Junction Temp. (TJ) with Power Applied (320-Ball BGA)........140°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation of the device at these or at any other conditions above those indicated in the operational sections of this specification is not implied (while programming, follow the programming specifications).
DC Recommended Operating Condition
T V V V
A
SYMBOL
CC IL IH
PARAMETER
Ambient Temperature Supply Voltage Input Low Voltage Input High Voltage
MIN. MAX. UNITS
0
4.75 0
2.0
70
5.25
0.8
V +1
CC
Table 2-0005/3256E
°C
V V V
Capacitance (TA=25°C,f=1.0 MHz)
SYMBOL
C
1
C
2
I/O Capacitance Clock Capacitance
PARAMETER
Data Retention Specifications
PARAMETER
Data Retention ispLSI Erase/Reprogram Cycles
UNITSTYPICAL TEST CONDITIONS
10 15
MINIMUM MAXIMUM UNITS
20
10000
pf V = 5.0V, V = 2.0V pf V = 5.0V, V = 2.0V
– –
CC I/O
CC Y
Table 2-0006/3256E
Years
Cycles
Table 2-0008/3256E
4
Switching Test Conditions
Specifications ispLSI 3256E
Input Pulse Levels Input Rise and Fall Time
Input Timing Reference Levels Output Timing Reference Levels Output Load
3-state levels are measured 0.5V from
GND to 3.0V
3ns 10% to 90%
1.5V
1.5V
See Figure 2
Table 2-0003/3256E
steady-state active level.
Output Load conditions (See Figure 2)
TEST CONDITION R1 R2 CL
A 470 390 35pF
Active High
B
Active Low Active High to Z
at V -0.5V
C
Active Low to Z at V +0.5V
OH
OL
390 35pF
470 390 35pF
390 5pF
470 390 5pF

DC Electrical Characteristics

Table 2 - 0004A
Figure 2. Test Load
Device Output
*C
includes Test Fixture and Probe Capacitance.
L
+ 5V
R
1
Test
Point
R
2
C
*
L
0213A
Over Recommended Operating Conditions
SYMBOL
V
OL
V
OH
I
IL
I
IH
I
IL-isp
I
IL-PU
1
I
OS
2,4
I
CC
Output Low Voltage Output High Voltage Input or I/O Low Leakage Current Input or I/O High Leakage Current Bscan/ispEN Input Low Leakage Current I/O Active Pull-Up Current Output Short Circuit Current
Operating Power Supply Current
PARAMETER
I = 8 mA
OL
I = -4 mA
OH
0V V V (Max.)
3.5V V V 0V V V 0V V V V = 5V, V = 0.5V
CC OUT
V = 0.0V, V = 3.0V
IL IH
f = 1 MHz
TOGGLE
1. One output at a time for a maximum duration of one second. V = 0.5V was selected to avoid test problems
CONDITION MIN. TYP. MAX. UNITS
IN IL
IN
IN IL
IN CC
IL
2.4 – – – – –
OUT
by tester ground degradation. Characterized but not 100% tested.
2. Measured using sixteen 16-bit counters.
3. Typical values are at V
4. Maximum I
varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
CC
= 5V and TA = 25°C.
CC
section of this datasheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate maximum I
CC
.
3
– – – – – – –
300
Table 2 - 0007isp/3256E
0.4 –
-10 10
-150
-150
-200 –
V V
µA µA µA µA
mA mA
5
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