Lattice Semiconductor Corporation ISPLSI2128E-180LT176, ISPLSI2128E-135LT176, ISPLSI2128E-100LT176 Datasheet

ispLSI® 2128E
Global Routing Pool (GRP)
Output Routing Pool (ORP) Output Routing Pool (ORP)
Output Routing Pool (ORP) Output Routing Pool (ORP)
Output Routing Pool (ORP) Output Routing Pool (ORP)
CLK 0
Output Routing Pool (ORP) Output Routing Pool (ORP)
CLK 1
CLK 2
Logic Array
GLB
DQ
DQ
DQ
DQ
0139(9A)/2128
C7
C6
C5
C4
C3
C2
C1
C0
D3
D2
D1
D0
D7
D6
D5
D4
B4
B5
B6
B7
B0
B1
B2
B3
A0
A1
A2
A3
A4
A5
A6
A7
In-System Programmable
SuperFAST™ High Density PLD
Features
• SUPERFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC
— 6000 PLD Gates — 128 I/O Pins, Eight Dedicated Inputs — 128 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, State
Machines, Address Decoders, etc. — Small Logic Block Size for Random Logic — 100% Functional/JEDEC Upward Compatible with
ispLSI 2128 Devices
• HIGH PERFORMANCE E —
fmax = 180 MHz Maximum Operating Frequency tpd = 5.0 ns Propagation Delay
— — TTL Compatible Inputs and Outputs — 5V Programmable Logic Core — ispJTAG™ In-System Programmable via IEEE 1149.1
(JTAG) Test Access Port
— User-Selectable 3.3V or 5V I/O Supports Mixed-
Voltage Systems — PCI Compatible Outputs — Open-Drain Output Option — Electrically Erasable and Reprogrammable — Non-Volatile — Unused Product Term Shutdown Saves Power
• ispLSI OFFERS THE FOLLOWING ADDED FEATURES — Increased Manufacturing Yields, Reduced Time-to-
Market and Improved Product Quality
— Reprogram Soldered Devices for Faster Prototyping
• OFFERS THE EASE OF USE AND FAST SYSTEM SPEED OF PLDs WITH THE DENSITY AND FLEXIBILITY OF FIELD PROGRAMMABLE GATE ARRAYS
— Complete Programmable Device Can Combine Glue
Logic and Structured Designs — Enhanced Pin Locking Capability — Three Dedicated Clock Input Pins — Synchronous and Asynchronous Clocks — Programmable Output Slew Rate Control to
Minimize Switching Noise — Flexible Pin Placement — Optimized Global Routing Pool Provides Global
Interconnectivity
• ispDesignEXPERT™ – LOGIC COMPILER AND COM­PLETE ISP DEVICE DESIGN SYSTEMS FROM HDL SYNTHESIS THROUGH IN-SYSTEM PROGRAMMING
— Superior Quality of Results — Tightly Integrated with Leading CAE Vendor Tools — Productivity Enhancing Timing Analyzer, Explore
Tools, Timing Simulator and ispANALYZER™
— PC and UNIX Platforms
Copyright © 1998 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A. Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com
2128e_02 1
2
CMOS® TECHNOLOGY
Functional Block Diagram
Description
The ispLSI 2128E is a High Density Programmable Logic Device. The device contains 128 Registers, 128 Univer­sal I/O pins, eight Dedicated Input pins, three Dedicated Clock Input pins, two dedicated Global OE input pins and a Global Routing Pool (GRP). The GRP provides com­plete interconnectivity between all of these elements. The ispLSI 2128E features 5V in-system programmabil­ity and in-system diagnostic capabilities. The ispLSI 2128E offers non-volatile reprogrammability of all logic, as well as the interconnect to provide truly reconfigurable systems.
The basic unit of logic on the ispLSI 2128E device is the Generic Logic Block (GLB). The GLBs are labeled A0, A1 .. D7 (see Figure 1). There are a total of 32 GLBs in the ispLSI 2128E device. Each GLB is made up of four macrocells. Each GLB has 18 inputs, a programmable AND/OR/Exclusive OR array, and four outputs which can be configured to be either combinatorial or registered.Inputs to the GLB come from the GRP and dedicated inputs. All of the GLB outputs are brought back into the GRP so that they can be connected to the inputs of any GLB on the device.
The device also has 128 I/O cells, each of which is directly connected to an I/O pin. Each I/O cell can be
November 1998
Functional Block Diagram
Figure 1. ispLSI 2128E Functional Block Diagram
I/O 127
I/O 126
I/O 125
I/O 124
I/O 123
I/O 122
I/O 121
RESET
GOE 0 GOE 1
I/O 10 I/O 11
I/O 12 I/O 13 I/O 14 I/O 15
I/O 16 I/O 17 I/O 18 I/O 19
I/O 20 I/O 21 I/O 22 I/O 23
I/O 24 I/O 25 I/O 26 I/O 27
I/O 28 I/O 29 I/O 30 I/O 31
TCK/ IN 0 TMS/IN 1
BSCAN
Megablock
G
e
n
e
r
c
i
L
o
g
c
i
(
G
o
l
L
c
B
s
k
I/O 0 I/O 1 I/O 2 I/O 3
I/O 4 I/O 5 I/O 6 I/O 7
I/O 8 I/O 9
Input Bus
Output Routing Pool (ORP) Output Routing Pool (ORP)
D7
s
B
)
A0
A1
A2
A3
A4
A5
A6
A7
B0
Output Routing Pool (ORP) Output Routing Pool (ORP)
IN 2
IN 3
I/O 32
I/O 33
I/O 34
I/O 35
I/O 120
Output Routing Pool (ORP) Output Routing Pool (ORP)
D6
B1
B2
I/O 36
I/O 37
I/O 38
I/O 39
I/O 40
I/O 41
I/O 42
I/O 119
D5
I/O 43
I/O 118
I/O 44
I/O 117
B3
I/O 45
I/O 116
Input Bus
I/O 46
I/O 115
I/O 114
I/O 113
Input Bus
D4
Global
Routing
Pool
(GRP)
B4
I/O 47
I/O 48
I/O 49
Specifications ispLSI 2128E
I/O 112
I/O 111
I/O 110
I/O 109
I/O 108
I/O 107
I/O 106
I/O 105
I/O 104
I/O 103
I/O 102
I/O 101
I/O 100
I/O 99
I/O 98
I/O 97
I/O 96
TDI/IN 7
TDO/IN 6
IN 5 IN 4
I/O 95 I/O 94 I/O 93 I/O 92
I/O 91 I/O 90 I/O 89 I/O 88
I/O 87 I/O 86 I/O 85 I/O 84
I/O 83 I/O 82 I/O 81 I/O 80
I/O 79
Input Bus
I/O 78 I/O 77 I/O 76
I/O 75 I/O 74 I/O 73 I/O 72
I/O 71 I/O 70 I/O 69 I/O 68
Output Routing Pool (ORP) Output Routing Pool (ORP)
I/O 67 I/O 66 I/O 65 I/O 64
0139/2128E
I/O 50
I/O 51
I/O 59
D1
I/O 60
B7
I/O 61
I/O 62
I/O 63
D0
C7
C6
C5
C4
C3
C2
C1
C0
CLK 0
CLK 1
CLK 2
Y0Y1Y2
D2
D3
B5
B6
I/O 52
I/O 53
I/O 54
I/O 55
I/O 56
I/O 57
I/O 58
individually programmed to be a combinatorial input, output or bi-directional I/O pin with 3-state control. The signal levels are TTL compatible voltages and the output drivers can source 4 mA or sink 8 mA. Each output can be programmed independently for fast or slow output slew rate to minimize overall output switching noise. By connecting the VCCIO pins to a common 5V or 3.3V power supply, I/O output levels can be matched to 5V or
3.3V compatible voltages. When connected to a 5V
supply, the I/O pins provide PCI-compatible output drive. Eight GLBs, 32 I/O cells, two dedicated inputs and two
ORPs are connected together to make a Megablock (see Figure 1). The outputs of the eight GLBs are connected to a set of 32 universal I/O cells by the two ORPs. Each ispLSI 2128E device contains four Megablocks.
The GRP has as its inputs, the outputs from all of the GLBs and all of the inputs from the bi-directional I/O cells. All of these signals are made available to the inputs of the GLBs. Delays through the GRP have been equalized to minimize timing skew.
Clocks in the ispLSI 2128E device are selected using the dedicated clock pins. Three dedicated clock pins (Y0, Y1, Y2) or an asynchronous clock can be selected on a GLB basis. The asynchronous or Product Term clock can be generated in any GLB for its own clock.
Programmable Open-Drain Outputs
In addition to the standard output configuration, the outputs of the ispLSI 2128E are individually program­mable, either as a standard totem-pole output or an open-drain output. The totem-pole output drives the specified Voh and Vol levels, whereas the open-drain output drives only the specified Vol. The Voh level on the open-drain output depends on the external loading and pull-up. This output configuration is controlled by a pro­grammable fuse. The default configuration when the device is in bulk erased state is totem-pole configuration. The open-drain/totem-pole option is selectable through the ispDesignEXPERT software tools.
2
Specifications ispLSI 2128E
Absolute Maximum Ratings
1
Supply Voltage Vcc.................................. -0.5 to +7.0V
Input Voltage Applied........................-2.5 to VCC +1.0V
Off-State Output Voltage Applied .....-2.5 to VCC +1.0V
Storage Temperature................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (TJ) with Power Applied ... 150°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation of the device at these or at any other conditions above those indicated in the operational sections of this specification is not implied (while programming, follow the programming specifications).
DC Recommended Operating Condition
V V
V V
CC CCIO
IL IH
SYMBOL
PARAMETER
Supply Voltage: Logic Core, Input Buffers Supply Voltage: Output Drivers
Input Low Voltage Input High Voltage
5V
3.3V
TA = 0°C to +70°C
MIN. MAX. UNITS
4.75
4.75 5.25 V
3.0 3.6 V 0
2.0
5.25
0.8
V
cc
+1
V
V V
Table 2-0005/2128E
Capacitance (TA=25°C, f=1.0 MHz)
SYMBOL
C
1
C
2
C
3
Dedicated Input Capacitance I/O Capacitance Clock Capacitance
PARAMETER
Erase/Reprogram Specification
PARAMETER MINIMUM MAXIMUM UNITS
Erase/Reprogram Cycles
TYP
8 8
10
10,000 Cycles
UNITS TEST CONDITIONS
pf pf pf V = 5.0V, V = 2.0V
V = 5.0V, V = 2.0V
CC
V = 5.0V, V = 2.0V
CC I/O
CC Y
IN
Table 2-0006/2128E
Table 2-0008/2128E
3
Switching Test Conditions
+ 5V
R
1
R
2
C
L
*
Device Output
Test
Point
*
CL includes Test Fixture and Probe Capacitance.
0213A
Specifications ispLSI 2128E
Input Pulse Levels Input Rise and Fall Time 10% to 90%
Input Timing Reference Levels Output Timing Reference Levels Output Load 3-state levels are measured 0.5V from
steady-state active level.
GND to 3.0V
1.5 ns
1.5V
1.5V
See Figure 2
Table 2-0003/2128E
Figure 2. Test Load
Output Load Conditions (see Figure 2)
TEST CONDITION R1 R2 CL
A 470 390 35pF
Active High
B
Active Low Active High to Z
at V -0.5V
C
Active Low to Z at V +0.5V
OH
OL
390 35pF
470 390 35pF
390 5pF
470 390 5pF
Table 2 - 0004A/2000

DC Electrical Characteristics

Over Recommended Operating Conditions
SYMBOL
V
OL
V
OH
I
IL
I
IH
I
IL-PU
I
OS
I
CC
Output Low Voltage Output High Voltage Input or I/O Low Leakage Current
Input or I/O High Leakage Current
I/O Active Pull-Up Current
1
Output Short Circuit Current V
3,4
Operating Power Supply Current
1. One output at a time for a maximum duration of one second. V
PARAMETER
I
= 8 mA
OL
= -4 mA
I
OH
0V V (V V 0V V
V f
TOGGLE
VIL (Max.)
IN
- 0.2)V ≤ VIN V
CCIO
V
CCIO
CCIO
= 0.0V, VIH = 3.0V
IL
5.25V
IN
2.0V
IN
= 5.0V or 3.3V, V
= 1 MHz
CONDITION MIN. TYP.
2.4
CCIO
– –
-10
= 0.5V ––-240 mA
OUT
165 mA
= 0.5V was selected to avoid test
OUT
problems by tester ground degradation. Characterized but not 100% tested.
2. Meaured using eight 16-bit counters.
3. Typical values are at V
= 5V and TA = 25°C.
CC
4. Unused inputs held at 0.0V.
5. Maximum I
varies widely with specific device configuration and operating frequency. Refer to the
CC
Power Consumption section of this data sheet and the Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate maximum I
CC
.
3
MAX. UNITS
– – – – –
0.4
-10 10
10
-250
Table 2-0007/2128E
V V
µA µA
µA µA
4
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