Lattice Semiconductor Corporation ISPLSI1032-60LG-883 Datasheet

ispLSI® 1032/883
In-System Programmable High Density PLD
Features
• HIGH-DENSITY PROGRAMMABLE LOGIC — High Speed Global Interconnect
• HIGH PERFORMANCE E —
fmax = 60 MHz Maximum Operating Frequency
tpd = 20 ns Propagation Delay — TTL Compatible Inputs and Outputs — Electrically Erasable and Reprogrammable — Non-Volatile E — 100% Tested
• IN-SYSTEM PROGRAMMABLE — In-System Programmable™ (ISP™) 5-Volt Only — Increased Manufacturing Yields, Reduced Time-to-
Market, and Improved Product Quality
— Reprogram Soldered Devices for Faster Prototyping
• COMBINES EASE OF USE AND THE FAST SYSTEM SPEED OF PLDs WITH THE DENSITY AND FLEX-
IBILITY OF FIELD PROGRAMMABLE GATE ARRAYS
— Complete Programmable Device Can Combine Glue
Logic and Structured Designs
— Four Dedicated Clock Input Pins — Synchronous and Asynchronous Clocks — Flexible Pin Placement — Optimized Global Routing Pool Provides Global
Interconnectivity
• ispDesignEXPERT™ – LOGIC COMPILER AND COM­PLETE ISP DEVICE DESIGN SYSTEMS FROM HDL SYNTHESIS THROUGH IN-SYSTEM PROGRAMMING
— Superior Quality of Results — Tightly Integrated with Leading CAE Vendor Tools — Productivity Enhancing Timing Analyzer, Explore
Tools, Timing Simulator and ispANALYZER™
— PC and UNIX Platforms
2
2
CMOS® TECHNOLOGY
CMOS Technology
Functional Block Diagram
Output Routing Pool
D7 D6 D5 D4 D3 D2 D1 D0
A0 A1 A2 A3 A4 A5
Output Routing Pool
A6
Global Routing Pool (GRP)
A7
B0 B1 B2 B3 B4 B5 B6 B7
Logic Array
DQ
DQ
DQ
DQ
GLB
C7 C6 C5 C4 C3 C2 C1
Output Routing Pool
C0
CLK
Output Routing Pool
Description
The ispLSI 1032/883 is a High-Density Programmable Logic Device processed in full compliance to MIL-STD-
883. This military grade device contains 192 Registers, 64 Universal I/O pins, eight Dedicated Input pins, four Dedicated Clock Input pins and a Global Routing Pool (GRP). The GRP provides complete interconnectivity between all of these elements. The ispLSI 1032/883 features 5-Volt in-system programming and in-system diagnostic capabilities. It is the first device which offers non-volatile reprogrammability of the logic, as well as the interconnect to provide truly reconfigurable systems.
The basic unit of logic on the ispLSI 1032/883 device is the Generic Logic Block (GLB). The GLBs are labeled A0, A1 .. D7 (see figure 1). There are a total of 32 GLBs in the ispLSI 1032/883 device. Each GLB has 18 inputs, a programmable AND/OR/XOR array, and four outputs which can be configured to be either combinatorial or registered. Inputs to the GLB come from the GRP and dedicated inputs. All of the GLB outputs are brought back into the GRP so that they can be connected to the inputs of any other GLB on the device.
Copyright © 2000 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A. September 2000 Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com
1032MIL_01
1
Functional Block Diagram
Figure 1. ispLSI 1032/883 Functional Block Diagram
Specifications ispLSI 1032/883
RESET
I/O 0 I/O 1 I/O 2 I/O 3
I/O 4 I/O 5 I/O 6 I/O 7
I/O 8
I/O 9 I/O 10 I/O 11
I/O 12 I/O 13 I/O 14 I/O 15
SDI/IN 0
MODE/IN 1
ispEN
Input Bus
Megablock
SDO/IN 2
SCLK/IN 3
I/O62I/O63I/O61I/O60I/O59I/O58I/O57I/O56I/O55I/O54I/O53I/O52I/O51I/O50I/O49I/O
Generic
Logic Blocks
(GLBs)
D7 D6 D5 D4 D3 D2 D1 D0
A0
A1
A2
A3
A4
A5
Output Routing Pool (ORP)
A6
A7
B0 B1 B2 B3 B4 B5 B6 B7
I/O17I/O16I/O18I/O19I/O20I/O21I/O22I/O23I/O24I/O25I/O26I/O27I/O28I/O29I/O30I/O
Input Bus
Output Routing Pool (ORP)
Global
Routing
Pool
(GRP)
Output Routing Pool (ORP)
Input Bus
IN7IN
6
48
IN 5 IN 4
lnput Bus
0139(1)-32-isp
I/O 47 I/O 46 I/O 45 I/O 44
I/O 43 I/O 42
I/O 41 I/O 40
I/O 39 I/O 38 I/O 37 I/O 36
I/O 35 I/O 34 I/O 33 I/O 32
C7
C6
C5
C4
C3
C2
C1
C0
Distribution
Network
31
Y0Y1Y2Y
Output Routing Pool (ORP)
CLK 0
Clock
CLK 1 CLK 2 IOCLK 0 IOCLK 1
3
The device also has 64 I/O cells, each of which is directly connected to an I/O pin. Each I/O cell can be individually programmed to be a combinatorial input, registered in­put, latched input, output or bi-directional I/O pin with 3-state control. Additionally, all outputs are polarity se­lectable, active high or active low. The signal levels are TTL compatible voltages and the output drivers can source 4 mA or sink 8 mA.
Eight GLBs, 16 I/O cells, two dedicated inputs and one ORP are connected together to make a Megablock (see figure 1). The outputs of the eight GLBs are connected to a set of 16 universal I/O cells by the ORP. The I/O cells within the Megablock also share a common Output Enable (OE) signal. The ispLSI 1032/883 device con­tains four of these Megablocks.
The GRP has as its inputs the outputs from all of the GLBs and all of the inputs from the bi-directional I/O cells. All of these signals are made available to the inputs of the GLBs. Delays through the GRP have been equalized to minimize timing skew.
Clocks in the ispLSI 1032/883 device are selected using the Clock Distribution Network. Four dedicated clock pins (Y0, Y1, Y2 and Y3) are brought into the distribution network, and five clock outputs (CLK 0, CLK 1, CLK 2, IOCLK 0 and IOCLK 1) are provided to route clocks to the GLBs and I/O cells. The Clock Distribution Network can also be driven from a special clock GLB (C0 on the ispLSI 1032/883 device). The logic of this GLB allows the user to create an internal clock from a combination of internal signals within the device.
2
Specifications ispLSI 1032/883
SYMBOL PARAMETER MAXIMUM
1
UNITS TEST CONDITIONS
C
1
10 pf V
CC
=5.0V, VIN=2.0V
C
2
I/O and Clock Capacitance 10 pf VCC=5.0V, V
I/O
, VY=2.0V
1. Characterized but not 100% tested.
Table 2- 0006mil
Dedicated Input Capacitance
Absolute Maximum Ratings
1
Supply Voltage Vcc...................................-0.5 to +7.0V
Input Voltage Applied........................ -2.5 to VCC +1.0V
Off-State Output Voltage Applied ..... -2.5 to VCC +1.0V
Storage Temperature................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (TJ) with Power Applied ... 150°C
1. Stresses above those listed under the Absolute Maximum Ratings may cause permanent damage to the device. Functional operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Conditions
PARAMETERSYMBOL MIN. MAX. UNITS
V V
CC IL
Supply Voltage
Input Low Voltage
Military/883 T
= -55°C to +125°C
C
4.5 0
5.5
0.8
V
V
V
IH
Input High Voltage
Capacitance (TA=25oC, f=1.0 MHz)
Data Retention Specifications
PARAMETER
Data Retention Erase/Reprogram Cycles
2.0
MINIMUM MAXIMUM UNITS
20
10000
— —
Vcc + 1
Years
Cycles
V
0005A mil.eps
Table 2- 0008B
3
Switching Test Conditions
-
Specifications ispLSI 1032/883
Input Pulse Levels GND to 3.0V Input Rise and Fall Time 3ns 10% to 90% Input Timing Reference Levels 1.5V Output Timing Reference Levels 1.5V Output Load See figure 2
3-state levels are measured 0.5V from steady-state active level.
-
Output Load Conditions (see figure 2)
Test Condition R1 R2 CL
A 470 390 35pF B Active High 390 35pF
Active Low 470 390Ω 35pF Active High to Z 390 5pF
Cat V
- 0.5V
OH
Active Low to Z 470 390Ω 5pF
+ 0.5V
at V
OL
Figure 2. Test Load
+ 5V
R
1
Device Output
R
2
*
CL includes Test Fixture and Probe Capacitance.
C
Test
Point
*
L

DC Electrical Characteristics

Over Recommended Operating Conditions
– – – – – – –
135
3
UNITSTYP.
0.4
-10 10
-150
-150
-200 220
0007A-32 mil
SYMBOL
V
OL
V
OH
I
IL
I
IH
I
IL-isp
I
IL-PU
1
I
OS
2,4
I
CC
Output Low Voltage Output High Voltage Input or I/O Low Leakage Current Input or I/O High Leakage Current isp Input Low Leakage Current I/O Active Pull-Up Current Output Short Circuit Current Operating Power Supply Current
PARAMETER
IOL =8 mA
=-4 mA
I
OH
0V V
3.5V V 0V VIN VIL (MAX.)
0V V VCC = 5V, V
= 0.5V, V
V
IL
f
TOGGLE
1. One output at a time for a maximum duration of one second. V degradation. Characterized but not 100% tested.
CONDITION
VIL (MAX.)
IN
V
IN
CC
V
IN
IL
= 0.5V
OUT
= 3.0V
IH
= 1 MHz
MIN. MAX.
2.4
– – – – – –
= 0.5V was selected to avoid test problems by tester ground
out
2. Measured using six16-bit counters.
3. Typical v alues are at V
4. Maximum I
varies widely with specific device configuration and operating frequency . Refer to the Power Consumption sec
CC
= 5V and TA = 25oC.
CC
tion of this datasheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate maximum
.
I
CC
V V
µA µA µA µA
mA mA
4
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