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2
2
CMOS® TECHNOLOGY
CMOS Technology
Functional Block Diagram
Output Routing Pool
D7 D6 D5 D4 D3 D2 D1 D0
A0
A1
A2
A3
A4
A5
Output Routing Pool
A6
Global Routing Pool (GRP)
A7
B0 B1 B2 B3 B4 B5 B6 B7
Logic
Array
DQ
DQ
DQ
DQ
GLB
C7
C6
C5
C4
C3
C2
C1
Output Routing Pool
C0
CLK
Output Routing Pool
Description
The ispLSI 1032/883 is a High-Density Programmable
Logic Device processed in full compliance to MIL-STD-
883. This military grade device contains 192 Registers,
64 Universal I/O pins, eight Dedicated Input pins, four
Dedicated Clock Input pins and a Global Routing Pool
(GRP). The GRP provides complete interconnectivity
between all of these elements. The ispLSI 1032/883
features 5-Volt in-system programming and in-system
diagnostic capabilities. It is the first device which offers
non-volatile reprogrammability of the logic, as well as the
interconnect to provide truly reconfigurable systems.
The basic unit of logic on the ispLSI 1032/883 device is
the Generic Logic Block (GLB). The GLBs are labeled A0,
A1 .. D7 (see figure 1). There are a total of 32 GLBs in the
ispLSI 1032/883 device. Each GLB has 18 inputs, a
programmable AND/OR/XOR array, and four outputs
which can be configured to be either combinatorial or
registered. Inputs to the GLB come from the GRP and
dedicated inputs. All of the GLB outputs are brought back
into the GRP so that they can be connected to the inputs
of any other GLB on the device.
The device also has 64 I/O cells, each of which is directly
connected to an I/O pin. Each I/O cell can be individually
programmed to be a combinatorial input, registered input, latched input, output or bi-directional I/O pin with
3-state control. Additionally, all outputs are polarity selectable, active high or active low. The signal levels are
TTL compatible voltages and the output drivers can
source 4 mA or sink 8 mA.
Eight GLBs, 16 I/O cells, two dedicated inputs and one
ORP are connected together to make a Megablock (see
figure 1). The outputs of the eight GLBs are connected to
a set of 16 universal I/O cells by the ORP. The I/O cells
within the Megablock also share a common Output
Enable (OE) signal. The ispLSI 1032/883 device contains four of these Megablocks.
The GRP has as its inputs the outputs from all of the GLBs
and all of the inputs from the bi-directional I/O cells. All of
these signals are made available to the inputs of the
GLBs. Delays through the GRP have been equalized to
minimize timing skew.
Clocks in the ispLSI 1032/883 device are selected using
the Clock Distribution Network. Four dedicated clock pins
(Y0, Y1, Y2 and Y3) are brought into the distribution
network, and five clock outputs (CLK 0, CLK 1, CLK 2,
IOCLK 0 and IOCLK 1) are provided to route clocks to the
GLBs and I/O cells. The Clock Distribution Network can
also be driven from a special clock GLB (C0 on the ispLSI
1032/883 device). The logic of this GLB allows the user
to create an internal clock from a combination of internal
signals within the device.
2
Specifications ispLSI 1032/883
SYMBOLPARAMETER MAXIMUM
1
UNITSTEST CONDITIONS
C
1
10pfV
CC
=5.0V, VIN=2.0V
C
2
I/O and Clock Capacitance10pfVCC=5.0V, V
I/O
, VY=2.0V
1. Characterized but not 100% tested.
Table 2- 0006mil
Dedicated Input Capacitance
Absolute Maximum Ratings
1
Supply Voltage Vcc...................................-0.5 to +7.0V
Input Voltage Applied........................ -2.5 to VCC +1.0V
Off-State Output Voltage Applied ..... -2.5 to VCC +1.0V
Storage Temperature................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (TJ) with Power Applied ... 150°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Conditions
PARAMETERSYMBOLMIN.MAX.UNITS
V
V
CC
IL
Supply Voltage
Input Low Voltage
Military/883T
= -55°C to +125°C
C
4.5
0
5.5
0.8
V
V
V
IH
Input High Voltage
Capacitance (TA=25oC, f=1.0 MHz)
Data Retention Specifications
PARAMETER
Data Retention
Erase/Reprogram Cycles
2.0
MINIMUMMAXIMUMUNITS
20
10000
—
—
Vcc + 1
Years
Cycles
V
0005A mil.eps
Table 2- 0008B
3
Switching Test Conditions
-
Specifications ispLSI 1032/883
Input Pulse LevelsGND to 3.0V
Input Rise and Fall Time≤ 3ns 10% to 90%
Input Timing Reference Levels1.5V
Output Timing Reference Levels1.5V
Output LoadSee figure 2
3-state levels are measured 0.5V from steady-state
active level.
-
Output Load Conditions (see figure 2)
Test ConditionR1R2CL
A470Ω390Ω35pF
BActive High390Ω35pF
Active Low470Ω390Ω35pF
Active High to Z390Ω5pF
Cat V
- 0.5V
OH
Active Low to Z470Ω390Ω5pF
+ 0.5V
at V
OL
∞
∞
Figure 2. Test Load
+ 5V
R
1
Device
Output
R
2
*
CL includes Test Fixture and Probe Capacitance.
C
Test
Point
*
L
DC Electrical Characteristics
Over Recommended Operating Conditions
–
–
–
–
–
–
–
135
3
UNITSTYP.
0.4
–
-10
10
-150
-150
-200
220
0007A-32 mil
SYMBOL
V
OL
V
OH
I
IL
I
IH
I
IL-isp
I
IL-PU
1
I
OS
2,4
I
CC
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
isp Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
PARAMETER
IOL =8 mA
=-4 mA
I
OH
0V ≤ V
3.5V ≤ V
0V ≤ VIN ≤ VIL (MAX.)
0V ≤ V
VCC = 5V, V
= 0.5V, V
V
IL
f
TOGGLE
1. One output at a time for a maximum duration of one second. V
degradation. Characterized but not 100% tested.
CONDITION
≤ VIL (MAX.)
IN
≤ V
IN
CC
≤ V
IN
IL
= 0.5V
OUT
= 3.0V
IH
= 1 MHz
MIN.MAX.
–
2.4
–
–
–
–
–
–
= 0.5V was selected to avoid test problems by tester ground
out
2. Measured using six16-bit counters.
3. Typical v alues are at V
4. Maximum I
varies widely with specific device configuration and operating frequency . Refer to the Power Consumption sec
CC
= 5V and TA = 25oC.
CC
tion of this datasheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate maximum
.
I
CC
V
V
µA
µA
µA
µA
mA
mA
4
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