Korea Electronics Co Ltd E65A27VBS, E65A27VBR Datasheet
2002. 10. 9 1/1
SEMICONDUCTOR
TECHNICAL DATA
E65A27VBS, E65A27VBR
STACK SILICON DIFFUSED DIODE
Revision No : 0
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=65A.
Zener Voltage : 27V(Typ.)
POLARITY
E65A27VBS (+ Type)
E65A27VBR (- Type)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F
IFM=100A
- - 1.05 V
Zener Voltage
V
Z
IZ=10mA
24 27 29 V
Reverse Current
I
R
VR=20V
- - 0.2
A
Transient Thermal Resistance
V
F
IFM=100A, IM=100mA, Pw=100mS
- - 50 mV
Breakdown Voltage
V
br
I
rsm
=65A, Pw=10mS
- - 34 V
Temperature Coefficient
T
IZ=10mA
- 15.7 -
mV/
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150 , VR=20V
- - 100
A
Temperature Resistance
R
th
DC total junction to case - - 0.6
/W
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
I
F(AV)
65 A
Peak 1 Cycle Surge Current
I
FSM
450 (60Hz) A
Non-Repetitive Peak
Reverse Surge Current (10mS)
I
RSM
65 A
Transient Peak Reverse Voltage
V
RSM
20 V
Peak Reverse Voltage
V
RM
20 V
Junction Temperature
T
j
-40 215
Storage Temperature Range
T
stg
-40 215
A
DIM MILLIMETERS
Φ11.5 MAX
A
B
Φ12.75+0.09-0.00
_
C
D
K
H
J
F
G
B
E
F
G
H
I
J
K
I
E
D
+
Φ1.3 0.04
_
+
4.2 0.2
_
+
8.0 0.2
TYP 0.5
Φ10.0 0.2
_
+
0.4 0.1x45
8.5 MAX
0.2+0.1
28.35 0.5
B-PF
_
+
_
+
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