Korea Electronics Co Ltd E50A21VBS, E50A21VBR Datasheet
SEMICONDUCT
E50A21VBS, E50A21VBR
STACK SILICON DIFFUSED DIODE
Revision No : 5
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
·Average Forward Current : IO=50A.
·Zener Voltage : 21V(Typ.)
POLARITY
E50A21VBS (+ Type)
E50A21VBR (- Type)
MAXIMUM RATING (Ta=25℃)
DIMMILLIMETERS
B-PF
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3 0.04
4.2 0.2
8.0 0.2
TYP 0.5
Φ10.0 0.2
0.4 0.1x45
0.2+0.1
28.35 0.5
A
F
E
I
D
G
B
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F
IFM=100A
- - 1.05 V
Zener Voltage
V
Z
IZ=10mA
19 21 23 V
Reverse Current
I
R
VR=18V
- - 0.3
μA
Transient Thermal Resistance
ΔV
F
IFM=100A, IM=100mA, Pw=100mS
- - 60 mV
Breakdown Voltage
V
br
I
rsm
=55A, Pw=10mS
- - 32 V
Temperature Coefficient
α
T
IZ=10mA
- 15.7 -
mV/℃
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150℃, VR=18V
- - 100
μA
Temperature Resistance
R
th
DC total junction to case - - 0.6
℃/W
OR
TECHNICAL DATA
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
Peak 1 Cycle Surge Current
Non-Repetitive Peak
Reverse Surge Current (10mS)
Transient Peak Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
I
F(AV)
I
FSM
I
RSM
V
V
T
RSM
RM
T
j
stg
50 A
380 (60Hz) A
55 A
19 V
16 V
-40～215
-40～215
℃
℃
A
B
C
D
K
H
J
E
F
G
H
I
J
K
_
+
_
+
_
+
_
+
8.5 MAX
_
+
_
+
2002. 4. 16 1/1
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