Korea Electronics Co Ltd E35A37VBS, E35A37VBR Datasheet
SEMICONDUCTOR
E35A37VBS, E35A37VBR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
ᴌAverage Forward Current : IO=35A.
ᴌZener Voltage : 37V(Typ.)
POLARITY
E35A37VBS (+ Type)
E35A37VBR (- Type)
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak
Reverse Surge Current
(Pulse width=10mS)
Transient Peak Reverse
Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
I
F(AV)
I
FSM
I
RSM
V
V
T
RSM
RM
T
j
stg
35 A
300 (60Hz) A
35 A
34 V
32 V
-40ᴕ215
-40ᴕ215
ᴱ
ᴱ
STACK SILICON DIFFUSED DIODE
A
DIM MILLIMETERS
A
Φ11.5 MAX
Φ12.75+0.09-0.00
B
Φ1.3 0.04
C
4.2 0.2
D
8.0 0.2
K
H
J
F
G
B
E
TYP 0.5
F
Φ10.0 0.2
G
0.4 0.1x45
H
I
8.5 MAX
0.2+0.1
J
28.35 0.5
K
I
E
D
B-PF
_
+
_
+
_
+
_
+
_
+
_
+
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
Zener Voltage
Reverse Current
Transient Thermal Resistance
Breakdown Voltage
Temperature Coefficient
Reverse Leakage Current Under
High Temperature
Temperature Resistance
2002. 1. 30 1/1
Revision No : 1
V
V
I
ẤV
V
ề
HI
R
F
Z
R
br
T
R
th
IFM=100A
IZ=10mA
VR=32V
IFM=100A, IM=100mA, Pw=100mS
F
I
=35A, Pw=10mS
rsm
IZ=10mA
Ta=150ᴱ, VR=32V
- - 1.15 V
34 37 40 V
- - 10
- - 70 mV
- - 55 V
- 27 -
- - 100
DC total junction to case - - 0.8
ỌA
mV/ᴱ
ỌA
ᴱ/W
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