Korea Electronics Co Ltd E35A2CDS, E35A2CDR Datasheet
2002. 10. 9 1/1
SEMICONDUCTOR
TECHNICAL DATA
E35A2CDS, E35A2CDR
STACK SILICON DIFFUSED DIODE
Revision No : 1
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=35A.
Reverse Voltage : 200V(Min)
POLARITY
E35A2CDS E35A2CDR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F
IFM=100A
- - 1.05 V
Reverse Voltage
V
R
IR=5mA
200 - - V
Reverse Current
I
R
VR=200V
- - 50
A
Reverse Recovery Time
t
rr
IF=0.1A, IR=0.1A
- - 15
S
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150 , VR=200v
- - 2.5 mA
Temperature Resistance
R
th
DC total Junction to case - 0.8 -
/W
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
I
F(AV)
35 A
Peak 1 Cycle Surge Current
I
FSM
350 (60Hz) A
Repetitive Peak Revese Voltage
V
RRM
200 V
Junction Temperature
T
j
-40 200
Storage Temperature Range
T
stg
-40 200
MILLIMETERSDIM
3.1 0.1
E
F
G
L1
MILLIMETERS
19.0 1.0
23.0 1.0
E
B
A
_
+
Φ1.5
R0.5
_
+
5 0.4
_
+
_
+
F
G
DIM MILLIMETERS
DIM
_
+
A
9.5 0.2
_
+
B
8.4 0.2
C
1.2
D1
POLARITY
TYPE
S
L2
R
L1
PD
L2
D
C
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