Korea Electronics Co Ltd E35A2CBS, E35A2CBR Datasheet

SEMICONDUCT

E35A2CBS, E35A2CBR

STACK SILICON DIFFUSED DIODE

Revision No : 2

DIMMILLIMETERS

B-PF

Φ11.5 MAX

Φ12.75+0.09-0.00

Φ1.3 0.04

4.2 0.2

8.0 0.2

TYP 0.5

Φ10.0 0.2

0.4 0.1x45

0.2+0.1

28.35 0.5

A

F

E

I

D

G

B

ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

FEATURES

·Average Forward Current : IO=35A.

·Repetive Peak Reverse Voltage : V

RRM

=200V

POLARITY

E35A2CBS E35A2CBR

(+ Type) (- Type)

MAXIMUM RATING (Ta=25℃)

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC SYMBOL RATING UNIT

Average Forward Current

I

F(AV)

35 A

Peak 1 Cycle Surge Current

I

FSM

300 (60Hz) A

Repetitive Peak Revese Voltage

V

RRM

200 V

Junction Temperature

T

j

-40～215

℃

Storage Temperature Range

T

stg

-40～215

℃

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Forward Voltage

V

F

IFM=100A

- - 1.10 V

Reverse Voltage

V

R

IR=5mA

200 - - V

Reverse Current

I

R

VR=200V

- - 50

μA

Transient Thermal Resistance

ΔV

F

IFM=100A, IM=100mA, Pw=100ms

- - 100 mV

Reverse Leakage Current Under

High Temperature

HI

R

Ta=150℃, VR=200V

- - 2.5 mA

Reverse Recovery Time

t

rr

IF=0.1A, IR=0.1A

- - 15

μs

Temperature Resistance

R

th

DC total Junction to case - - 0.8

℃/W

OR

TECHNICAL DATA

A

B

C

D

K

H

J

E

F

G

H

I

J

K

_
+

_
+

_
+

_
+

8.5 MAX

_
+

_
+

2002. 4. 9 1/1