Korea Electronics Co Ltd E35A23VS, E35A23VR Datasheet
SEMICONDUCTOR
E35A23VS, E35A23VR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
ᴌAverage Forward Current : IO=35A.
ᴌZener Voltage : 23V(Typ.)
POLARITY
E35A23VS E35A23VR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
Peak 1 Cycle Surge Current
Peak Reverse Surge Current
(I
/2=10ms)
RSM
Peak Revese Over Voltage
Peak Revese Voltage
Junction Temperature
Storage Temperature Range
I
F(AV)
I
FSM
I
RSM
V
V
T
RSM
RM
T
j
stg
35 A
450 (50Hz) A
70 A
70 V
17 V
-40ᴕ200
-40ᴕ150
ᴱ
ᴱ
STACK SILICON DIFFUSED DIODE
A3
A2
D3
D1
D2
TH
DIM MILLIMETERS
A1
A2
A3
B1
B2
C1
C2
D1
EF
_
+
10.0 0.3
_
+
13.5 0.3
_
+
24.0 0.5
_
+
8.5 0.3
_
+
10.0 0.3
_
+
2.0 0.3
_
+
5.0 0.3
_
+
2.5 0.3
A1
B1
C1
G
DIM MILLIMETERS
D2
D3
E
F
G
H
T
_
+
5.0 0.3
_
+
4.5 0.3
_
+
1.9 0.3
_
+
9.0 0.3
_
+
1.0 0.3
_
+
4.4 0.5
_
+
0.6 0.3
B2
C2
MR
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage
Zener Voltage
Repetitive Peak Reverse Curren
Transient Thermal Resistance
Reverse Leakage Current Under
High Temperature
V
I
I
HI
FM
V
RRM
RRM
Z
R
Reverse recovery Time Trr
Temperature Resistance Rth DC total junction to case - - 1.0
Thermal runway Temperature Trwy
Temperature Coefficient
2001. 2. 8 1/1
Revision No : 0
ề
T
IFM=100A
IZ=10mA
VR=V
RM
IFM=100A, Pw=100mS
Ta=150ᴱ, VR=V
RM
IF=100mA, -IR=100mA
90% Recovery Point
VR=17V, IR=5mA
IR=10mA
- - 1.05 V
20 23 26 V
- - 10
- - 90 mV
- - 2.5 mA
- - 5.0
ᴱ/W
200 - -
- 18 -
mV/ᴱ
ỌA
ỌS
ᴱ
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