Korea Electronics Co Ltd E30A2CDS, E30A2CDR Datasheet
2002. 10. 9 1/1
SEMICONDUCTOR
TECHNICAL DATA
E30A2CDS, E30A2CDR
STACK SILICON DIFFUSED DIODE
Revision No : 1
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=30A.
Reverse Voltage : 200V(Min)
POLARITY
E30A2CDS E30A2CDR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage
V
FM
IFM=100A
- - 1.20 V
Reverse Voltage
V
RM
IR=5mA
200 - - V
Repetitive Peak Reverse Current
I
RRM
VR=200V
- - 50
A
Reverse Recovery Time
t
rr
IF=-IR 100mA
- - 15
S
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150 , VR=V
RM
- - 2.5 mA
Temperature Resistance
R
th
Junction to case - 1.0 -
/W
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
200 V
Average Forward Current
I
F(AV)
30 A
Peak 1 Cycle Surge Current
I
FSM
300
(10ms Condition)
A
Junction Temperature
T
j
-40 200
Storage Temperature Range
T
stg
-40 200
MILLIMETERSDIM
3.1 0.1
E
F
G
L1
MILLIMETERS
19.0 1.0
23.0 1.0
E
B
A
_
+
Φ1.5
R0.5
_
+
5 0.4
_
+
_
+
L2
D
C
F
G
L1
DIM MILLIMETERS
DIM
_
+
A
9.5 0.2
_
+
B
8.4 0.2
C
1.2
D1
POLARITY
TYPE
S
L2
R
PD
Loading...