Korea Electronics Co Ltd E30A23VS, E30A23VR Datasheet
2002. 10. 9 1/2
SEMICONDUCTOR
TECHNICAL DATA
E30A23VS, E30A23VR
STACK SILICON DIFFUSED DIODE
Revision No : 2
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=30A.
Zener Voltage : 23V(Typ.)
POLARITY
E30A23VS E30A23VR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage
V
FM
IFM=100A
- - 1.2 V
Zener Voltage
V
Z
IZ=10mA
21 23 25 V
Repetitive Peak Reverse Current
I
RRM
VR=V
RM
- - 10
A
Transient Thermal Resistance
V
F
IFM=100A
- - 100 mV
Reverse Leakage Current
Under High Temperature
HIR
Ta=150 , VR=V
RM
- - 2.5 mA
Reverse Recovery Time
t
rr
IF=100mA, -IR=100mA,
90% Recovery Point
- - 1.5
S
Temperature Resistance
R
th
DC total junction to case - - 1.0
/W
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
I
F(AV)
30 A
Peak 1 Cycle Surge Current
I
FSM
300(50Hz) A
Repetitive Peak Reverse
Surge Current
I
RSM
30 A
Transient Peak Reverse Voltage
V
RSM
17 V
Peak Reverse Voltage
V
RM
17 V
Junction Temperature
T
j
-40 190
Storage Temperature Range
T
stg
-40 150
A3
A2
D3
D1
D2
TH
DIM MILLIMETERS
A1
A2
A3
B1
B2
C1
C2
D1
EF
_
+
10.0 0.3
_
+
13.5 0.3
_
+
24.0 0.5
_
+
8.5 0.3
_
+
10.0 0.3
_
+
2.0 0.3
_
+
5.0 0.3
_
+
2.5 0.3
A1
B1
C1
G
DIM MILLIMETERS
D2
D3
E
F
G
H
T
_
+
5.0 0.3
_
+
4.5 0.3
_
+
1.9 0.3
_
+
9.0 0.3
_
+
1.0 0.3
_
+
4.4 0.5
_
+
0.6 0.3
MR
B2
C2
2002. 10. 9 2/2
E30A23VS, E30A23VR
Revision No : 2
1000
F
100
10
FORWARD CURRENT I (A)
1
0.7
0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE V (V)
I - V
FF
I - Ta
F(AV)
40
F(AV)
30
20
10
0
AVERAGE FORWARD CURRENT I (A)
F
0
40
AMBIENT TEMPERATURE Ta ( C)
Ta=Tc
16080 120
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