Korea Electronics Co Ltd E30A23VPS, E30A23VPR Datasheet
2002. 10. 9 1/1
SEMICONDUCTOR
TECHNICAL DATA
E30A23VPS, E30A23VPR
STACK SILICON DIFFUSED DIODE
Revision No : 1
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=30A.
Zener Voltage : 23V(Typ.)
POLARITY
E30A23VPS E30A23VPR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage
V
FM
IFM=100A
- - 1.17 V
Zener Voltage
V
Z
IZ=10mA
21 23 25 V
Repetitive Peak Reverse Current
I
RRM
VR=V
RM
- - 10
A
Transient Thermal Resistance
V
F
IFM=100A
- - 140 mV
Reverse Leakage Current
Under High Temperature
HIR
Ta=150 , VR=V
RM
- - 2.5 mA
Temperature Resistance
R
th
DC total junction to case - - 1.0
/W
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
I
F(AV)
30 A
Peak 1 Cycle Surge Current
I
FSM
300(50Hz) A
Repetitive Peak Reverse
Surge Current
I
RSM
30 A
Transient Peak Reverse Voltage
V
RSM
17 V
Peak Reverse Voltage
V
RM
17 V
Junction Temperature
T
j
-40 200
Storage Temperature Range
T
stg
-40 200
D
E
F1
G
A
DIM MILLIMETERS
Φ11.7+0.1/-0
A
3.85+0/-0.2
DIM
B
D
E
L2
Φ1.45 0.1
TYPE
S
R
_
+
1.55
POLARITY
L1
B
F1
F2
G
L1
L2
MILLIMETERSDIM
0.32
3.1
0.5
8.4 MAX
MILLIMETERS
17.5+0/-1.5
21.5+0/-1.5
PF
F2
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