Korea Electronics Co Ltd E25A2CPS, E25A2CPR Datasheet

SEMICONDUCTOR
E25A2CPS, E25A2CPR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=25A.
Reverse Voltage : 200V(Min.)
POLARITY
E25A2CPS (+ Type)
E25A2CPR (- Type)
MAXIMUM RATING (Ta=25)
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Average Forward Current
Peak 1 Cycle Surge Current
Junction Temperature
Storage Temperature Range
V
P
I
F(AV)
I
FSM
T
RRM
RM
T
j
stg
200 V
1.35
(Pulse duration 30ỌS
Non-repetitive)
25 A
250
(10mS Condition
Half sine wave 1 cycle)
-40200
-40200
kW
A
STACK SILICON DIFFUSED DIODE
D
E
F1
G
A
DIM MILLIMETERS
Φ11.7+0.1/-0
A
3.85+0/-0.2
DIM
B D
E
L2
Φ1.45 0.1
TYPE
S
R
_ +
1.55
POLARITY
L1
B
F1
F2
G
L1
L2
MILLIMETERSDIM
0.32
3.1
0.5
8.4 MAX
MILLIMETERS
17.5+0/-1.5
21.5+0/-1.5
PF
F2
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage
Reverse Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Transient Thermal Resistance
Reverse Leakage Current Under
High Temperature
Temperature Resistance
V
V
I
RRM
t
V
HI
R
FM
RM
rr
th
IFM=100A
IR=5mA
VR=200V
IF=-IR100mA
IFM=100A, Im=100mA,
F
Pt=100mS
R
Ta=150, VR=V
RM
- - 1.18 V
200 - - V
- - 50
A
- - 15
- - 150 mV
- - 2.5 mA
S
Junction to Case - - 0.93
/W
Junction to Fin - - 1.13
1998. 2. 19 1/1
Revision No : 0
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