Korea Electronics Co Ltd BSS64 Datasheet
SEMICONDUCTOR
BSS64
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
-65ᴕ150
120 V
80 V
5 V
100 mA
-100 mA
200 mW
150
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
LL
MILLIMETERS
DIM
A
B
C
D
3
M
D
E
G
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
V
I
CBO
I
EBO
h
FE
BE(sat)
CE(sat)
f
T
C
ob
IC=4mA, IB=0
IC=100ỌA, IE=0
IE=100ỌA, IC=0
VCB=90V, IE=0
VCB=90V, IE=0, Ta=150ᴱ
VEB=5V, IC=0
VCE=1V, IC=1mA
VCE=1V, IC=4mA
VCE=1V, IC=10mA
VCE=1V, IC=20mA
IC=4mA, IB=0.4mA
IC=4mA, IB=0.4mA
IC=50mA, IB=15mA
VCE=10V, IC=4mA, f=100MHz
VCB=10V, IE=0, f=1MHz
Marking
Type Name
SOT-23
Lot No.
U6
80 - - V
120 - - V
5.0 - - V
- - 100 nA
- - 50
- - 200 nA
- 60 -
20 - -
- 80 -
- 55 -
- - 1.2 V
- - 0.15
- - 0.2
60 - - MHz
- - 5.0 pF
ỌA
V
1998. 6. 15 1/1
Revision No : 1
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