Korea Electronics Co Ltd BSS63 Datasheet
SEMICONDUCTOR
BSS63
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
-65ᴕ150
-110 V
-100 V
-6 V
-100 mA
100 mA
200 mW
150
ᴱ
ᴱ
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
LL
MILLIMETERS
DIM
A
B
C
D
3
M
D
E
G
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
I
V
V
CBO
EBO
h
FE
BE(sat)
CE(sat)
f
T
C
ob
Type Name
IC=-10mA, IB=0
IC=-10ỌA, IE=0
IE=-10ỌA, IC=0
VCB=-90V, IE=0
VCB=-90V, IE=0, Ta=150ᴱ
VEB=-5V, IC=0
VCE=-1V, IC=-10mA
VCE=-1V, IC=-25mA
IC=-25mA, IB=-2.5mA
IC=-25mA, IB=-2.5mA
IC=-75mA, IB=-7.5mA
IC=-25mA, VCE=-5V, f=100MHz
VCB=-10V, IE=0, f=1MHz
Marking
SOT-23
Lot No.
T6
-100 - - V
-110 - - V
-6 - - V
- - -100 nA
- - -50
- - -200 nA
30 - -
30 - -
- - -0.9 V
- - -0.25
- - -0.9
50 - - MHz
- 3 - pF
ỌA
V
1998. 6. 15 1/1
Revision No : 1
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