Korea Electronics Co Ltd BC637 Datasheet
SEMICONDUCTOR
BC637
TECHNICAL DATA
HIGH CURRENT TRANSISTORS.
FEATURES
ᴌComplementary to BC638.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
-55ᴕ150
60 V
60 V
5 V
500 mA
625 mW
150
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. COLLECTOR
3. BASE
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
J
K
L
_
14.00 0.50
+
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Input Capacitance
Collector Output Capacitance
* Pulse Test : Pulse Widthᴪ300ỌS, Duty Cycle 2.0%
I
CBO
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
h
V
CE(sat)
V
C
C
FE
BE
f
T
ib
ob
VCB=30V, IE=0
IC=10mA, IB=0
IC=100ỌA, IE=0
IE=10ỌA, IC=0
VCE=2V, IC=150mA
IC=500mA, IB=50mA
VCE=2V, IC=500mA
VCE=2V, IC=50mA, f=100MHz
VEB=0.5V, IC=0, f=1MHz
VCB=10V, IE=0, f=1MHz
- - 100 nA
60 - - V
60 - - V
5.0 - - V
40 - 160
- - 0.5 V
- - 1.0 V
- 200 - MHz
- 50 - pF
- 7.0 - pF
2000. 10. 2 1/1
Revision No : 0
Loading...